Test Data of etching SiO2 with CHF3/CF4

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Revision as of 09:24, 31 January 2019 by Ningcao (talk | contribs) (add a SEM pic)
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ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) SEM Images
10/5/2018 SiO2#02 160 1.2 82.1 :File:SiO2 Etch using ICP2-no O2.pdf
1/28/2019 I21901 146 1.23 [1]