Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4"

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|[https://wiki.nanotech.ucsb.edu/w/images/2/2e/ICP2_01_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/6/69/ICP2_01_CS_007.jpg <nowiki>[2]</nowiki>]
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|[https://wiki.nanotech.ucsb.edu/w/images/c/c3/ICP2_03_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/7/74/ICP2_03_CS_003.jpg <nowiki>[2]</nowiki>]
 
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===Alternate Data (not updated)===
 
===Alternate Data (not updated)===

Revision as of 09:16, 30 March 2022

ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) SEM Images
10/5/2018 SiO2#02 160 1.2 82.1 [1]
1/28/2019 I21901 146 1.23 [2]
3/6/2019 I21904 151 1.23 85.6 [3]
7/18/2019 I21905 162 1.37 [4]
1/16/2020 I22001 149 1.21 [5]
8/9/2020 I22002 102 0.86 caused by air leaking to CHF3 channel [6]
1/7/2021 I22101 144 1.20 [7]
5/19/2021 I22102 163 1.11 Etch time=130 sec [8]
7/21/2021 I22103 134 1.09 Investigating reports of low etch rate [9]
8/9/2021 I22104 147 1.06 Before etching diamond sample for 1 hour using Cl2/Ar [10]
8/9/2021 I22105 140 0.97 After etching diamond sample for 1 hour using Cl2/Ar. Found chamber/etches are ok. [11]
3/2/2022 NP_ICP2_01 169.6 1.29 [1] [2]
3/8/2022 NP_ICP2_02 144 1.02 [1] [2]
3/30/2022 NP_ICP2_03 164 1.23 [1] [2]


Alternate Data (not updated)

We stopped taking data for the following table in 2019, use the above data instead.