Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4"
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| − | {| class="wikitable" |
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| − | | colspan="5" |ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec |
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| − | |- |
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| − | |Date |
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| − | |Sample# |
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| − | |Etch Rate (nm/min) |
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| − | |Etch Selectivity (SiO2/PR) |
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| − | |Averaged Sidewall Angle (<sup>o</sup>) |
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| − | |- |
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| − | |10-8-2018 |
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| − | |SiO2#02 |
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| − | |160 |
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| − | |1.23 |
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| − | |82.1 |
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| − | |- |
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| − | |1/28/2019 |
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| − | |I21901 |
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| − | |146 |
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| − | |1.23 |
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| − | | |
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| − | |} |
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| − | [https://www.nanotech.ucsb.edu/wiki/index.php/File:SiO2_Etch_using_ICP2-no_O2-a.pdf File:SiO2 Etch using ICP2-no O2-a.pdf] |
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