Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4"
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Revision as of 11:19, 29 January 2019
| ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec | ||||
| Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Averaged Sidewall Angle (o) |
| 1/28/2019 | I11901 | 110 | 1.35 | |