Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4"

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m (added entry to ICP2, added selectivity for recent cals)
m (made more recent cals on top of table for ICP2)
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|SEM Images
  
|SEM Images
 
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|10/5/2018
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|3/30/2022
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|NP_ICP2_03
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|SiO2#02
  
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|160
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|164
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|1.2
  
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|82.1
  
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|[https://wiki.nanotech.ucsb.edu/wiki/images/1/13/SiO2_Etch_using_ICP2-no_O2.pdf]
  
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|1/28/2019
  
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|I21901
  
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|146
  
 
|1.23
  
|1.23
 
|
  
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−
|[https://wiki.nanotech.ucsb.edu/wiki/images/f/f9/SiO2_Etch_using_ICP2-no_O2-a.pdf]
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|[https://wiki.nanotech.ucsb.edu/w/images/c/c3/ICP2_03_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/7/74/ICP2_03_CS_003.jpg <nowiki>[2]</nowiki>]
 
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|3/6/2019
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|3/8/2022
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|NP_ICP2_02
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|I21904
  
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|151
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|144
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|1.23
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|1.02
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|85.6
  
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|[https://wiki.nanotech.ucsb.edu/wiki/images/8/87/SiO2_Etch_using_ICP2_no_O2-3-06-2019.pdf]
  
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|-
  
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|7/18/2019
  
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|I21905
  
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|162
  
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|1.37
  
 
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|[https://wiki.nanotech.ucsb.edu/wiki/images/2/23/I2190506.pdf]
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|[https://wiki.nanotech.ucsb.edu/w/images/f/f4/ICP2_02_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/5/54/ICP2_02_CS_004.jpg <nowiki>[2]</nowiki>]
 
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|1/16/2020
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|3/2/2022
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|NP_ICP2_01
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|I22001
  
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|169.6
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|149
  
−
|1.21
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|1.29
 
|
  
|
−
|[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/I2200122.pdf]
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|[https://wiki.nanotech.ucsb.edu/w/images/2/2e/ICP2_01_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/6/69/ICP2_01_CS_007.jpg <nowiki>[2]</nowiki>]
 
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|8/9/2020
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|8/9/2021
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|I22105
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|I22002
  
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|102
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|140
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|0.86
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|0.97
  ⚫
|After etching diamond sample for 1 hour using Cl2/Ar. Found chamber/etches are ok.
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|caused by air leaking to CHF3 channel
  
−
|[https://wiki.nanotech.ucsb.edu/w/images/d/d4/I2200203.pdf]
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|[https://wiki.nanotech.ucsb.edu/w/images/2/26/I2210508.pdf]
 
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|1/7/2021
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|8/9/2021
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|I22104
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|I22101
  
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|144
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|147
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|1.20
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|1.06
  ⚫
|Before etching diamond sample for 1 hour using Cl2/Ar
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|
  
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|[https://wiki.nanotech.ucsb.edu/w/images/0/0c/I2210102.pdf]
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|[https://wiki.nanotech.ucsb.edu/w/images/2/28/I2210411.pdf]
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|-
  
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|5/19/2021
  
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|I22102
  
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|163
  
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|1.11
  
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|Etch time=130 sec
  
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|[https://wiki.nanotech.ucsb.edu/w/images/4/4c/I2210214.pdf]
  
 
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|7/21/2021
  
|7/21/2021
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|[https://wiki.nanotech.ucsb.edu/w/images/c/c3/I2210308.pdf]
  
|[https://wiki.nanotech.ucsb.edu/w/images/c/c3/I2210308.pdf]
 
|-
  
|-
−
|8/9/2021
 +
|5/19/2021
  ⚫
|I22102
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|I22104
  
−
|147
 +
|163
−
|1.06
 +
|1.11
  ⚫
|Etch time=130 sec
⚫
|Before etching diamond sample for 1 hour using Cl2/Ar
  
−
|[https://wiki.nanotech.ucsb.edu/w/images/2/28/I2210411.pdf]
 +
|[https://wiki.nanotech.ucsb.edu/w/images/4/4c/I2210214.pdf]
 
|-
  
|-
−
|8/9/2021
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|1/7/2021
  ⚫
|I22101
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|I22105
  
−
|140
 +
|144
−
|0.97
 +
|1.20
  ⚫
|
⚫
|After etching diamond sample for 1 hour using Cl2/Ar. Found chamber/etches are ok.
  
−
|[https://wiki.nanotech.ucsb.edu/w/images/2/26/I2210508.pdf]
 +
|[https://wiki.nanotech.ucsb.edu/w/images/0/0c/I2210102.pdf]
 
|-
  
|-
−
|3/2/2022
 +
|8/9/2020
  ⚫
|I22002
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|NP_ICP2_01
  
  +
|102
⚫
|169.6
  
−
|1.29
 +
|0.86
  ⚫
|caused by air leaking to CHF3 channel
  ⚫
|[https://wiki.nanotech.ucsb.edu/w/images/d/d4/I2200203.pdf]
  ⚫
|-
  +
|1/16/2020
  ⚫
|I22001
  ⚫
|149
  ⚫
|1.21
 
|
  
|
−
|[https://wiki.nanotech.ucsb.edu/w/images/2/2e/ICP2_01_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/6/69/ICP2_01_CS_007.jpg <nowiki>[2]</nowiki>]
 +
|[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/I2200122.pdf]
 
|-
  
|-
−
|3/8/2022
 +
|7/18/2019
  ⚫
|I21905
⚫
|NP_ICP2_02
  
−
|144
 +
|162
−
|1.02
 +
|1.37
 
|
  
|
−
|[https://wiki.nanotech.ucsb.edu/w/images/f/f4/ICP2_02_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/5/54/ICP2_02_CS_004.jpg <nowiki>[2]</nowiki>]
 +
|[https://wiki.nanotech.ucsb.edu/wiki/images/2/23/I2190506.pdf]
 
|-
  
|-
−
|3/30/2022
 +
|3/6/2019
  ⚫
|I21904
⚫
|NP_ICP2_03
  
−
|164
 +
|151
  ⚫
|1.23
  ⚫
|85.6
  ⚫
|[https://wiki.nanotech.ucsb.edu/wiki/images/8/87/SiO2_Etch_using_ICP2_no_O2-3-06-2019.pdf]
  ⚫
|-
  ⚫
|1/28/2019
  ⚫
|I21901
  ⚫
|146
 
|1.23
  
|1.23
 
|
  
|
−
|[https://wiki.nanotech.ucsb.edu/w/images/c/c3/ICP2_03_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/7/74/ICP2_03_CS_003.jpg <nowiki>[2]</nowiki>]
 +
|[https://wiki.nanotech.ucsb.edu/wiki/images/f/f9/SiO2_Etch_using_ICP2-no_O2-a.pdf]
  ⚫
|-
  +
|10/5/2018
  ⚫
|SiO2#02
  +
|160
  ⚫
|1.2
  ⚫
|82.1
  ⚫
|[https://wiki.nanotech.ucsb.edu/wiki/images/1/13/SiO2_Etch_using_ICP2-no_O2.pdf]
 
|}<br />
  
|}<br />
 
===Alternate Data (not updated)===
  
===Alternate Data (not updated)===

Revision as of 13:16, 13 April 2022

ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) SEM Images
3/30/2022 NP_ICP2_03 164 1.23 [1] [2]
3/8/2022 NP_ICP2_02 144 1.02 [1] [2]
3/2/2022 NP_ICP2_01 169.6 1.29 [1] [2]
8/9/2021 I22105 140 0.97 After etching diamond sample for 1 hour using Cl2/Ar. Found chamber/etches are ok. [1]
8/9/2021 I22104 147 1.06 Before etching diamond sample for 1 hour using Cl2/Ar [2]
7/21/2021 I22103 134 1.09 Investigating reports of low etch rate [3]
5/19/2021 I22102 163 1.11 Etch time=130 sec [4]
1/7/2021 I22101 144 1.20 [5]
8/9/2020 I22002 102 0.86 caused by air leaking to CHF3 channel [6]
1/16/2020 I22001 149 1.21 [7]
7/18/2019 I21905 162 1.37 [8]
3/6/2019 I21904 151 1.23 85.6 [9]
1/28/2019 I21901 146 1.23 [10]
10/5/2018 SiO2#02 160 1.2 82.1 [11]


Alternate Data (not updated)

We stopped taking data for the following table in 2019, use the above data instead.

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