Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4"

From UCSB Nanofab Wiki
Jump to navigation Jump to search
(save a data)
(adding a pic)
Line 29: Line 29:
 
|1.23
 
|1.23
 
|85.6
 
|85.6
|
+
|[[:File:SiO2 Etch using ICP2 no O2-3-06-2019.pdf]]
 
|}
 
|}

Revision as of 15:21, 13 March 2019

ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) SEM Images
10/5/2018 SiO2#02 160 1.2 82.1 [1]
1/28/2019 I21901 146 1.23 [2]
3/6/2019 I21904 151 1.23 85.6 File:SiO2 Etch using ICP2 no O2-3-06-2019.pdf