Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4"

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|[https://www.nanotech.ucsb.edu/wiki/index.php/File:SiO2_Etch_using_ICP2-no_O2.pdf :File:SiO2 Etch using ICP2-no O2.pdf]
 
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Revision as of 09:24, 31 January 2019

ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) SEM Images
10/5/2018 SiO2#02 160 1.2 82.1 :File:SiO2 Etch using ICP2-no O2.pdf
1/28/2019 I21901 146 1.23 [1]