Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4"
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| − | | colspan="5" |ICP# |
+ | | colspan="5" |ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec |
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|Date |
|Date |
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|Etch Selectivity (SiO2/PR) |
|Etch Selectivity (SiO2/PR) |
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|Averaged Sidewall Angle (<sup>o</sup>) |
|Averaged Sidewall Angle (<sup>o</sup>) |
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| + | |- |
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| + | |10-8-2018 |
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| + | |SiO2#02 |
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| + | |160 |
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| + | |1.23 |
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| + | |82.1 |
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|1/28/2019 |
|1/28/2019 |
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| + | |I21901 |
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| − | |I11901 |
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| − | | |
+ | |146 |
| − | |1. |
+ | |1.23 |
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Revision as of 11:26, 29 January 2019
| ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec | ||||
| Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Averaged Sidewall Angle (o) |
| 10-8-2018 | SiO2#02 | 160 | 1.23 | 82.1 |
| 1/28/2019 | I21901 | 146 | 1.23 | |