Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4"
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| − | [https://www.nanotech.ucsb.edu/wiki/index.php/File:SiO2_Etch_using_ICP2-no_O2.pdf File:SiO2 Etch using ICP2-no O2.pdf] |
+ | [https://www.nanotech.ucsb.edu/wiki/index.php/File:SiO2_Etch_using_ICP2-no_O2-a.pdf File:SiO2 Etch using ICP2-no O2-a.pdf] |
Revision as of 10:25, 29 January 2019
| ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec | ||||
| Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Averaged Sidewall Angle (o) |
| 10/5/2018 | SiO2#02 | 160 | 1.2 | 82.1 |
| 1/28/2019 | I21901 | 146 | 1.2 | |