Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4"

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{| class="wikitable"
 
{| class="wikitable"
| colspan="5" |ICP#2:  0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
+
| colspan="5" |'''ICP#2''':  0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
 +
|
 +
|-
 +
!Date
 +
!Sample#
 +
!Etch  Rate (nm/min)
 +
!Etch  Selectivity (SiO2/PR)
 +
!Comments
 +
!SEM Images;
 +
|-
 +
|10/3/22
 +
|ND_Pan2_100322
 +
|143.1
 +
|1.23
 +
|
 +
|[https://wiki.nanotech.ucsb.edu/w/images/a/a0/30D_10302022_pan2_002.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/6/6d/CS_10302022_pan2_002.jpg <nowiki>[CS]</nowiki>]
 +
|-
 +
|9/26/22
 +
|ND_Pan2n_092622
 +
|131.4
 +
|1.40
 +
|Samples from new wafer
 +
|[https://wiki.nanotech.ucsb.edu/w/images/b/b4/30D_Pan2n_092622_002.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/c/c7/CS_Pan1n_092622_002.jpg <nowiki>[CS]</nowiki>]
 +
|-
 +
|9/26/22
 +
|ND_Pan2o_092622
 +
|130.6
 +
|1.14
 +
|Samples from old wafer
 +
|[https://wiki.nanotech.ucsb.edu/w/images/8/8e/CS_Pan2n_092622_002.jpg <nowiki>[CS]</nowiki>]
 +
|-
 +
|9/12/22
 +
|ND_Pan2_091222
 +
|156
 +
|1.33
 +
|Higher etch rate/selectivity, may be due to new Si wafer
 +
|[https://wiki.nanotech.ucsb.edu/w/images/7/79/30D_pan2_091222_002.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/c/cf/CS_pan2_091222_002.jpg <nowiki>[CS]</nowiki>]
 +
|-
 +
|8/26/22
 +
|ND_Pan2_082622
 +
|144.3
 +
|1.22
 +
|
 +
|[https://wiki.nanotech.ucsb.edu/w/images/7/71/30D_Pan2_082622_001.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/a/ad/CS_Pan2_082622_001.jpg <nowiki>[CS]</nowiki>]
 +
|-
 +
|8/8/2022
 +
|ND_Pan2_080822
 +
|134.3
 +
|1.12
 +
|
 +
|[https://wiki.nanotech.ucsb.edu/w/images/6/6d/30D_08082022_pan2_001.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/c/c0/CS_08082022_pan2_001.jpg <nowiki>[CS]</nowiki>]
 +
|-
 +
|7/29/2022
 +
|ND_Pan2_072922
 +
|142.3
 +
|1.20
 +
|
 +
|[https://wiki.nanotech.ucsb.edu/w/images/e/ef/30D_002.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/d/db/CS_002_07-29-22.jpg <nowiki>[CS]</nowiki>]
 +
|-
 +
|7/15/2022
 +
|ND_Pan2_071522
 +
|139.1
 +
|1.20
 +
|
 +
|[https://wiki.nanotech.ucsb.edu/w/images/a/a5/ND_Pan2_071522_45D.jpg <nowiki>[45D]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/f/fe/ND_Pan2_071522_CS.jpg <nowiki>[CS]</nowiki>]
 +
|-
 +
|5/5/2022
 +
|NP_ICP2_07
 +
|170
 +
|1.11
 +
|Right after Quartz Top-Plate Temperature reduced 100°C-->50°C.
 +
Etch Characteristics look similar to before.
 +
|[https://wiki.nanotech.ucsb.edu/w/images/9/94/ICP2_07_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/1/10/ICP2_07_CS_005.jpg <nowiki>[2]</nowiki>]
 +
|-
 +
|4/26/2022
 +
|NP_ICP2_06
 +
|176.3
 +
|1.14
 +
|
 +
|[https://wiki.nanotech.ucsb.edu/w/images/e/ec/ICP2_06_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/f/f6/ICP2_06_CS_001.jpg <nowiki>[2]</nowiki>]
 +
|-
 +
|4/20/2022
 +
|NP_ICP2_05
 +
|171.7
 +
|1.13
 +
|
 +
|[https://wiki.nanotech.ucsb.edu/w/images/9/9c/ICP2_05_45D_003.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/a/a5/ICP2_05_CS_001.jpg <nowiki>[2]</nowiki>]
 +
|-
 +
|4/12/2022
 +
|NP_ICP2_04
 +
|167.9
 +
|1.17
 +
|
 +
|[https://wiki.nanotech.ucsb.edu/w/images/6/6b/ICP2_004_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/4/49/ICP2_004_CS_003.jpg <nowiki>[2]</nowiki>]
 +
|-
 +
|3/30/2022
 +
|NP_ICP2_03
 +
|164
 +
|1.23
 +
|
 +
|[https://wiki.nanotech.ucsb.edu/w/images/c/c3/ICP2_03_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/7/74/ICP2_03_CS_003.jpg <nowiki>[2]</nowiki>]
 +
|-
 +
|3/8/2022
 +
|NP_ICP2_02
 +
|144
 +
|1.02
 +
|
 +
|[https://wiki.nanotech.ucsb.edu/w/images/f/f4/ICP2_02_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/5/54/ICP2_02_CS_004.jpg <nowiki>[2]</nowiki>]
 +
|-
 +
|3/2/2022
 +
|NP_ICP2_01
 +
|169.6
 +
|1.29
 +
|
 +
|[https://wiki.nanotech.ucsb.edu/w/images/2/2e/ICP2_01_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/6/69/ICP2_01_CS_007.jpg <nowiki>[2]</nowiki>]
 +
|-
 +
|8/9/2021
 +
|I22105
 +
|140
 +
|0.97
 +
|After etching diamond sample for 1 hour using Cl2/Ar.  Found
 +
chamber/etches are ok.
 +
|[https://wiki.nanotech.ucsb.edu/w/images/2/26/I2210508.pdf]
 +
|-
 +
|8/9/2021
 +
|I22104
 +
|147
 +
|1.06
 +
|Before etching diamond sample for 1 hour using Cl2/Ar
 +
|[https://wiki.nanotech.ucsb.edu/w/images/2/28/I2210411.pdf]
 +
|-
 +
|7/21/2021
 +
|I22103
 +
|134
 +
|1.09
 +
|Investigating reports of low etch rate
 +
|[https://wiki.nanotech.ucsb.edu/w/images/c/c3/I2210308.pdf]
 +
|-
 +
|5/19/2021
 +
|I22102
 +
|163
 +
|1.11
 +
|Etch time=130 sec
 +
|[https://wiki.nanotech.ucsb.edu/w/images/4/4c/I2210214.pdf]
 +
|-
 +
|1/7/2021
 +
|I22101
 +
|144
 +
|1.20
 +
|
 +
|[https://wiki.nanotech.ucsb.edu/w/images/0/0c/I2210102.pdf]
 +
|-
 +
|8/9/2020
 +
|I22002
 +
|102
 +
|0.86
 +
|caused by air leaking to CHF3 channel
 +
|[https://wiki.nanotech.ucsb.edu/w/images/d/d4/I2200203.pdf]
 +
|-
 +
|1/16/2020
 +
|I22001
 +
|149
 +
|1.21
 +
|
 +
|[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/I2200122.pdf]
 +
|-
 +
|7/18/2019
 +
|I21905
 +
|162
 +
|1.37
 +
|
 +
|[https://wiki.nanotech.ucsb.edu/wiki/images/2/23/I2190506.pdf]
 
|-
 
|-
|Date
+
|3/6/2019
|Sample#
+
|I21904
|Etch  Rate (nm/min)
+
|151
|Etch  Selectivity (SiO2/PR)
+
|1.23
|Averaged  Sidewall Angle (<sup>o</sup>)
+
|85.6
 +
|[https://wiki.nanotech.ucsb.edu/wiki/images/8/87/SiO2_Etch_using_ICP2_no_O2-3-06-2019.pdf]
 +
|-
 +
|1/28/2019
 +
|I21901
 +
|146
 +
|1.23
 +
|
 +
|[https://wiki.nanotech.ucsb.edu/wiki/images/f/f9/SiO2_Etch_using_ICP2-no_O2-a.pdf]
 
|-
 
|-
 
|10/5/2018
 
|10/5/2018
Line 13: Line 192:
 
|1.2
 
|1.2
 
|82.1
 
|82.1
|-
+
|[https://wiki.nanotech.ucsb.edu/wiki/images/1/13/SiO2_Etch_using_ICP2-no_O2.pdf]
|1/28/19
+
|}<br />
|I21901
+
===Alternate Data (not updated)===
|146
+
''We stopped taking data for the following table in 2019, use the above data instead.''
|1.23
+
 
|
+
*[[Test Data of etching SiO2 with CHF3/CF4/O2 (using this recipe only for Fluorine etch of the underneath layer)|Test Data of etching SiO2 with CHF3/CF4/O2]]
|}
 

Latest revision as of 13:33, 3 October 2022

ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Comments SEM Images;
10/3/22 ND_Pan2_100322 143.1 1.23 [30D] [CS]
9/26/22 ND_Pan2n_092622 131.4 1.40 Samples from new wafer [30D] [CS]
9/26/22 ND_Pan2o_092622 130.6 1.14 Samples from old wafer [CS]
9/12/22 ND_Pan2_091222 156 1.33 Higher etch rate/selectivity, may be due to new Si wafer [30D] [CS]
8/26/22 ND_Pan2_082622 144.3 1.22 [30D] [CS]
8/8/2022 ND_Pan2_080822 134.3 1.12 [30D] [CS]
7/29/2022 ND_Pan2_072922 142.3 1.20 [30D] [CS]
7/15/2022 ND_Pan2_071522 139.1 1.20 [45D][CS]
5/5/2022 NP_ICP2_07 170 1.11 Right after Quartz Top-Plate Temperature reduced 100°C-->50°C.

Etch Characteristics look similar to before.

[1] [2]
4/26/2022 NP_ICP2_06 176.3 1.14 [1] [2]
4/20/2022 NP_ICP2_05 171.7 1.13 [1] [2]
4/12/2022 NP_ICP2_04 167.9 1.17 [1] [2]
3/30/2022 NP_ICP2_03 164 1.23 [1] [2]
3/8/2022 NP_ICP2_02 144 1.02 [1] [2]
3/2/2022 NP_ICP2_01 169.6 1.29 [1] [2]
8/9/2021 I22105 140 0.97 After etching diamond sample for 1 hour using Cl2/Ar. Found

chamber/etches are ok.

[1]
8/9/2021 I22104 147 1.06 Before etching diamond sample for 1 hour using Cl2/Ar [2]
7/21/2021 I22103 134 1.09 Investigating reports of low etch rate [3]
5/19/2021 I22102 163 1.11 Etch time=130 sec [4]
1/7/2021 I22101 144 1.20 [5]
8/9/2020 I22002 102 0.86 caused by air leaking to CHF3 channel [6]
1/16/2020 I22001 149 1.21 [7]
7/18/2019 I21905 162 1.37 [8]
3/6/2019 I21904 151 1.23 85.6 [9]
1/28/2019 I21901 146 1.23 [10]
10/5/2018 SiO2#02 160 1.2 82.1 [11]


Alternate Data (not updated)

We stopped taking data for the following table in 2019, use the above data instead.