Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4"

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!Etch Selectivity (SiO2/PR)
  
!Etch Selectivity (SiO2/PR)
 
!Comments
  
!Comments
−
!SEM Images
 +
!SEM Images;
  +
|-
  +
|11/18/22
  +
|ND_Pan2_111822
  +
|154
  +
|1.33
  +
|
  +
|[https://wiki.nanotech.ucsb.edu/w/images/8/82/30D_pan2_111822_002.jpg <nowiki>[30D]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/c/c9/CS_pan2_111822_002.jpg <nowiki>[CS]</nowiki>]
  +
|-
  +
|11/07/22
  +
|ND_Pan2_110722
  +
|155.7
  +
|1.18
  +
|
  +
|[https://wiki.nanotech.ucsb.edu/w/images/f/f1/30D_pan2_110722_002.jpg <nowiki>[30]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/4/43/CS_pan2_110722_003.jpg <nowiki>[CS]</nowiki>]
  +
|-
  +
|10/21/22
  +
|ND_Pan2_102122
  +
|148.6
  +
|1.37
  +
|
  +
|[https://wiki.nanotech.ucsb.edu/w/images/f/f5/30D_pan2_102122_002.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/3/3d/CS_pan2_102122_002.jpg <nowiki>[CS]</nowiki>]
  +
|-
  +
|10/10/22
  +
|ND_Pan2_101022
  +
|118.3
  +
|1.07
  +
|
  +
|[https://wiki.nanotech.ucsb.edu/w/images/7/7c/30D_pan2_101022_002.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/9/9b/CS_pan2_101022_003.jpg <nowiki>[CS]</nowiki>]
  +
|-
  +
|10/3/22
  +
|ND_Pan2_100322
  +
|143.1
  +
|1.23
  +
|
  +
|[https://wiki.nanotech.ucsb.edu/w/images/a/a0/30D_10302022_pan2_002.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/6/6d/CS_10302022_pan2_002.jpg <nowiki>[CS]</nowiki>]
  +
|-
  +
|9/26/22
  +
|ND_Pan2n_092622
  +
|131.4
  +
|1.40
  +
|Samples from new wafer
  +
|[https://wiki.nanotech.ucsb.edu/w/images/b/b4/30D_Pan2n_092622_002.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/c/c7/CS_Pan1n_092622_002.jpg <nowiki>[CS]</nowiki>]
  +
|-
  +
|9/26/22
  +
|ND_Pan2o_092622
  +
|130.6
  +
|1.14
  +
|Samples from old wafer
  +
|[https://wiki.nanotech.ucsb.edu/w/images/7/79/45D_Pan2o_092622_002.jpg <nowiki>[45D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/8/8e/CS_Pan2n_092622_002.jpg <nowiki>[CS]</nowiki>]
  +
|-
  +
|9/12/22
  +
|ND_Pan2_091222
  +
|156
  +
|1.33
  +
|Higher etch rate/selectivity, may be due to new Si wafer
  +
|[https://wiki.nanotech.ucsb.edu/w/images/7/79/30D_pan2_091222_002.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/c/cf/CS_pan2_091222_002.jpg <nowiki>[CS]</nowiki>]
  +
|-
  +
|8/26/22
  +
|ND_Pan2_082622
  +
|144.3
  +
|1.22
  +
|
  +
|[https://wiki.nanotech.ucsb.edu/w/images/7/71/30D_Pan2_082622_001.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/a/ad/CS_Pan2_082622_001.jpg <nowiki>[CS]</nowiki>]
  +
|-
  +
|8/8/2022
  +
|ND_Pan2_080822
  +
|134.3
  +
|1.12
  +
|
  +
|[https://wiki.nanotech.ucsb.edu/w/images/6/6d/30D_08082022_pan2_001.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/c/c0/CS_08082022_pan2_001.jpg <nowiki>[CS]</nowiki>]
  +
|-
  +
|7/29/2022
  +
|ND_Pan2_072922
  +
|142.3
  +
|1.20
  +
|
  +
|[https://wiki.nanotech.ucsb.edu/w/images/e/ef/30D_002.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/d/db/CS_002_07-29-22.jpg <nowiki>[CS]</nowiki>]
 
|-
  
|-
 
|7/15/2022
  
|7/15/2022
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|170
  
|170
 
|1.11
  
|1.11
−
|Right after Quartz Top-Plate Temperature reduced 100°C-->50°C. Etch Characteristics look similar to before.
 +
|Right after Quartz Top-Plate Temperature reduced 100°C-->50°C.
  +
Etch Characteristics look similar to before.
 
|[https://wiki.nanotech.ucsb.edu/w/images/9/94/ICP2_07_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/1/10/ICP2_07_CS_005.jpg <nowiki>[2]</nowiki>]
  
|[https://wiki.nanotech.ucsb.edu/w/images/9/94/ICP2_07_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/1/10/ICP2_07_CS_005.jpg <nowiki>[2]</nowiki>]
 
|-
  
|-
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|140
  
|140
 
|0.97
  
|0.97
−
|After etching diamond sample for 1 hour using Cl2/Ar. Found chamber/etches are ok.
 +
|After etching diamond sample for 1 hour using Cl2/Ar. Found
  +
chamber/etches are ok.
 
|[https://wiki.nanotech.ucsb.edu/w/images/2/26/I2210508.pdf]
  
|[https://wiki.nanotech.ucsb.edu/w/images/2/26/I2210508.pdf]
 
|-
  
|-

Revision as of 18:30, 21 November 2022

ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Comments SEM Images;
11/18/22 ND_Pan2_111822 154 1.33 [30D][CS]
11/07/22 ND_Pan2_110722 155.7 1.18 [30] [CS]
10/21/22 ND_Pan2_102122 148.6 1.37 [30D] [CS]
10/10/22 ND_Pan2_101022 118.3 1.07 [30D] [CS]
10/3/22 ND_Pan2_100322 143.1 1.23 [30D] [CS]
9/26/22 ND_Pan2n_092622 131.4 1.40 Samples from new wafer [30D] [CS]
9/26/22 ND_Pan2o_092622 130.6 1.14 Samples from old wafer [45D] [CS]
9/12/22 ND_Pan2_091222 156 1.33 Higher etch rate/selectivity, may be due to new Si wafer [30D] [CS]
8/26/22 ND_Pan2_082622 144.3 1.22 [30D] [CS]
8/8/2022 ND_Pan2_080822 134.3 1.12 [30D] [CS]
7/29/2022 ND_Pan2_072922 142.3 1.20 [30D] [CS]
7/15/2022 ND_Pan2_071522 139.1 1.20 [45D][CS]
5/5/2022 NP_ICP2_07 170 1.11 Right after Quartz Top-Plate Temperature reduced 100°C-->50°C.

Etch Characteristics look similar to before.

[1] [2]
4/26/2022 NP_ICP2_06 176.3 1.14 [1] [2]
4/20/2022 NP_ICP2_05 171.7 1.13 [1] [2]
4/12/2022 NP_ICP2_04 167.9 1.17 [1] [2]
3/30/2022 NP_ICP2_03 164 1.23 [1] [2]
3/8/2022 NP_ICP2_02 144 1.02 [1] [2]
3/2/2022 NP_ICP2_01 169.6 1.29 [1] [2]
8/9/2021 I22105 140 0.97 After etching diamond sample for 1 hour using Cl2/Ar. Found

chamber/etches are ok.

[1]
8/9/2021 I22104 147 1.06 Before etching diamond sample for 1 hour using Cl2/Ar [2]
7/21/2021 I22103 134 1.09 Investigating reports of low etch rate [3]
5/19/2021 I22102 163 1.11 Etch time=130 sec [4]
1/7/2021 I22101 144 1.20 [5]
8/9/2020 I22002 102 0.86 caused by air leaking to CHF3 channel [6]
1/16/2020 I22001 149 1.21 [7]
7/18/2019 I21905 162 1.37 [8]
3/6/2019 I21904 151 1.23 85.6 [9]
1/28/2019 I21901 146 1.23 [10]
10/5/2018 SiO2#02 160 1.2 82.1 [11]


Alternate Data (not updated)

We stopped taking data for the following table in 2019, use the above data instead.

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