Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4"

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m (added selectivity to ICP2 cals)
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|Etch Rate (nm/min)
  
|Etch Rate (nm/min)
 
|Etch Selectivity (SiO2/PR)
  
|Etch Selectivity (SiO2/PR)
  +
|Comments
−
|Averaged Sidewall Angle (<sup>o</sup>)
  
 
|SEM Images
  
|SEM Images
 
|-
  
|-
−
|10/5/2018
 +
|5/5/2022
  +
|NP_ICP2_07
⚫
|SiO2#02
  
−
|160
 +
|170
−
|1.2
 +
|1.11
  +
|Right after Quartz Top-Plate Temperature reduced 100°C-->50°C. Etch Characteristics look similar to before.
⚫
|82.1
  
−
|[https://wiki.nanotech.ucsb.edu/wiki/images/1/13/SiO2_Etch_using_ICP2-no_O2.pdf]
 +
|[https://wiki.nanotech.ucsb.edu/w/images/9/94/ICP2_07_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/1/10/ICP2_07_CS_005.jpg <nowiki>[2]</nowiki>]
 
|-
  
|-
−
|1/28/2019
 +
|4/26/2022
  +
|NP_ICP2_06
⚫
|I21901
  
  +
|176.3
−
|146
  
−
|1.23
 +
|1.14
 
|
  
|
−
|[https://wiki.nanotech.ucsb.edu/wiki/images/f/f9/SiO2_Etch_using_ICP2-no_O2-a.pdf]
 +
|[https://wiki.nanotech.ucsb.edu/w/images/e/ec/ICP2_06_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/f/f6/ICP2_06_CS_001.jpg <nowiki>[2]</nowiki>]
 
|-
  
|-
−
|3/6/2019
 +
|4/20/2022
  +
|NP_ICP2_05
⚫
|I21904
  
  +
|171.7
−
|151
  
  +
|1.13
  ⚫
|
  +
|[https://wiki.nanotech.ucsb.edu/w/images/9/9c/ICP2_05_45D_003.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/a/a5/ICP2_05_CS_001.jpg <nowiki>[2]</nowiki>]
  +
|-
  +
|4/12/2022
  +
|NP_ICP2_04
  +
|167.9
  +
|1.17
  +
|
  +
|[https://wiki.nanotech.ucsb.edu/w/images/6/6b/ICP2_004_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/4/49/ICP2_004_CS_003.jpg <nowiki>[2]</nowiki>]
  +
|-
  +
|3/30/2022
  +
|NP_ICP2_03
  +
|164
 
|1.23
  
|1.23
  +
|
⚫
|85.6
  
−
|[https://wiki.nanotech.ucsb.edu/wiki/images/8/87/SiO2_Etch_using_ICP2_no_O2-3-06-2019.pdf]
 +
|[https://wiki.nanotech.ucsb.edu/w/images/c/c3/ICP2_03_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/7/74/ICP2_03_CS_003.jpg <nowiki>[2]</nowiki>]
 
|-
  
|-
−
|7/18/2019
 +
|3/8/2022
  +
|NP_ICP2_02
⚫
|I21905
  
−
|162
 +
|144
−
|1.37
 +
|1.02
 
|
  
|
−
|[https://wiki.nanotech.ucsb.edu/wiki/images/2/23/I2190506.pdf]
 +
|[https://wiki.nanotech.ucsb.edu/w/images/f/f4/ICP2_02_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/5/54/ICP2_02_CS_004.jpg <nowiki>[2]</nowiki>]
 
|-
  
|-
−
|1/16/2020
 +
|3/2/2022
  +
|NP_ICP2_01
⚫
|I22001
  
  +
|169.6
−
|149
  
−
|1.21
 +
|1.29
 
|
  
|
−
|[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/I2200122.pdf]
 +
|[https://wiki.nanotech.ucsb.edu/w/images/2/2e/ICP2_01_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/6/69/ICP2_01_CS_007.jpg <nowiki>[2]</nowiki>]
  +
|-
  +
|8/9/2021
  ⚫
|I22105
  +
|140
  +
|0.97
  ⚫
|After etching diamond sample for 1 hour using Cl2/Ar. Found chamber/etches are ok.
  +
|[https://wiki.nanotech.ucsb.edu/w/images/2/26/I2210508.pdf]
  +
|-
  +
|8/9/2021
  +
|I22104
  +
|147
  +
|1.06
  +
|Before etching diamond sample for 1 hour using Cl2/Ar
  +
|[https://wiki.nanotech.ucsb.edu/w/images/2/28/I2210411.pdf]
  +
|-
  +
|7/21/2021
  ⚫
|I22103
  +
|134
  +
|1.09
  ⚫
|Investigating reports of low etch rate
  +
|[https://wiki.nanotech.ucsb.edu/w/images/c/c3/I2210308.pdf]
  +
|-
  +
|5/19/2021
  ⚫
|I22102
  +
|163
  +
|1.11
  ⚫
|Etch time=130 sec
  +
|[https://wiki.nanotech.ucsb.edu/w/images/4/4c/I2210214.pdf]
  +
|-
  +
|1/7/2021
  ⚫
|I22101
  +
|144
  +
|1.20
  +
|
  +
|[https://wiki.nanotech.ucsb.edu/w/images/0/0c/I2210102.pdf]
 
|-
  
|-
 
|8/9/2020
  
|8/9/2020
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|[https://wiki.nanotech.ucsb.edu/w/images/d/d4/I2200203.pdf]
  
|[https://wiki.nanotech.ucsb.edu/w/images/d/d4/I2200203.pdf]
 
|-
  
|-
−
|1/7/2021
 +
|1/16/2020
  ⚫
|I22001
⚫
|I22101
  
−
|144
 +
|149
−
|1.20
 +
|1.21
 
|
  
|
−
|[https://wiki.nanotech.ucsb.edu/w/images/0/0c/I2210102.pdf]
 +
|[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/I2200122.pdf]
 
|-
  
|-
−
|5/19/2021
 +
|7/18/2019
  ⚫
|I21905
⚫
|I22102
  
−
|163
 +
|162
−
|1.11
 +
|1.37
  +
|
⚫
|Etch time=130 sec
  
−
|[https://wiki.nanotech.ucsb.edu/w/images/4/4c/I2210214.pdf]
 +
|[https://wiki.nanotech.ucsb.edu/wiki/images/2/23/I2190506.pdf]
 
|-
  
|-
−
|7/21/2021
 +
|3/6/2019
  ⚫
|I21904
⚫
|I22103
  
−
|134
 +
|151
−
|1.09
 +
|1.23
  ⚫
|85.6
⚫
|Investigating reports of low etch rate
  
−
|[https://wiki.nanotech.ucsb.edu/w/images/c/c3/I2210308.pdf]
 +
|[https://wiki.nanotech.ucsb.edu/wiki/images/8/87/SiO2_Etch_using_ICP2_no_O2-3-06-2019.pdf]
 
|-
  
|-
−
|8/9/2021
 +
|1/28/2019
  ⚫
|I21901
⚫
|I22105
  
−
|140
 +
|146
−
|0.97
 +
|1.23
⚫
|After etching diamond sample for 1 hour using Cl2/Ar
  
 
|
  
|
  +
|[https://wiki.nanotech.ucsb.edu/wiki/images/f/f9/SiO2_Etch_using_ICP2-no_O2-a.pdf]
⚫
|}
  
  +
|-
  +
|10/5/2018
  ⚫
|SiO2#02
  +
|160
  +
|1.2
  ⚫
|82.1
  +
|[https://wiki.nanotech.ucsb.edu/wiki/images/1/13/SiO2_Etch_using_ICP2-no_O2.pdf]
  +
|}<br />
  +
===Alternate Data (not updated)===
  +
''We stopped taking data for the following table in 2019, use the above data instead.''
  +
  +
*[[Test Data of etching SiO2 with CHF3/CF4/O2 (using this recipe only for Fluorine etch of the underneath layer)|Test Data of etching SiO2 with CHF3/CF4/O2]]

Revision as of 10:36, 11 May 2022

ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Comments SEM Images
5/5/2022 NP_ICP2_07 170 1.11 Right after Quartz Top-Plate Temperature reduced 100°C-->50°C. Etch Characteristics look similar to before. [1] [2]
4/26/2022 NP_ICP2_06 176.3 1.14 [1] [2]
4/20/2022 NP_ICP2_05 171.7 1.13 [1] [2]
4/12/2022 NP_ICP2_04 167.9 1.17 [1] [2]
3/30/2022 NP_ICP2_03 164 1.23 [1] [2]
3/8/2022 NP_ICP2_02 144 1.02 [1] [2]
3/2/2022 NP_ICP2_01 169.6 1.29 [1] [2]
8/9/2021 I22105 140 0.97 After etching diamond sample for 1 hour using Cl2/Ar. Found chamber/etches are ok. [1]
8/9/2021 I22104 147 1.06 Before etching diamond sample for 1 hour using Cl2/Ar [2]
7/21/2021 I22103 134 1.09 Investigating reports of low etch rate [3]
5/19/2021 I22102 163 1.11 Etch time=130 sec [4]
1/7/2021 I22101 144 1.20 [5]
8/9/2020 I22002 102 0.86 caused by air leaking to CHF3 channel [6]
1/16/2020 I22001 149 1.21 [7]
7/18/2019 I21905 162 1.37 [8]
3/6/2019 I21904 151 1.23 85.6 [9]
1/28/2019 I21901 146 1.23 [10]
10/5/2018 SiO2#02 160 1.2 82.1 [11]


Alternate Data (not updated)

We stopped taking data for the following table in 2019, use the above data instead.

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