Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4"

Revision as of 11:02, 21 April 2022

ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
Date	Sample#	Etch Rate (nm/min)	Etch Selectivity (SiO2/PR)	Averaged Sidewall Angle (^o)	SEM Images
4/20/22	NP_ICP2_05	171.7			[1] [2]
4/12/2022	NP_ICP2_04	167.9			[1] [2]
3/30/2022	NP_ICP2_03	164	1.23		[1] [2]
3/8/2022	NP_ICP2_02	144	1.02		[1] [2]
3/2/2022	NP_ICP2_01	169.6	1.29		[1] [2]
8/9/2021	I22105	140	0.97	After etching diamond sample for 1 hour using Cl2/Ar. Found chamber/etches are ok.	[1]
8/9/2021	I22104	147	1.06	Before etching diamond sample for 1 hour using Cl2/Ar	[2]
7/21/2021	I22103	134	1.09	Investigating reports of low etch rate	[3]
5/19/2021	I22102	163	1.11	Etch time=130 sec	[4]
1/7/2021	I22101	144	1.20		[5]
8/9/2020	I22002	102	0.86	caused by air leaking to CHF3 channel	[6]
1/16/2020	I22001	149	1.21		[7]
7/18/2019	I21905	162	1.37		[8]
3/6/2019	I21904	151	1.23	85.6	[9]
1/28/2019	I21901	146	1.23		[10]
10/5/2018	SiO2#02	160	1.2	82.1	[11]

We stopped taking data for the following table in 2019, use the above data instead.

@@ Line 9: / Line 9: @@
 |Averaged  Sidewall Angle (<sup>o</sup>)
 |SEM Images
+|-
+|4/20/22
+|NP_ICP2_05
+|171.7
+|
+|
+|[https://wiki.nanotech.ucsb.edu/w/images/9/9c/ICP2_05_45D_003.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/a/a5/ICP2_05_CS_001.jpg <nowiki>[2]</nowiki>]
 |-
 |4/12/2022
@@ Line 15: / Line 22: @@
 |
 |
 |[https://wiki.nanotech.ucsb.edu/w/images/6/6b/ICP2_004_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/4/49/ICP2_004_CS_003.jpg <nowiki>[2]</nowiki>]
 |-
 |3/30/2022