Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4"
Jump to navigation
Jump to search
(add a etch data point) |
(add a SEM pic) |
||
(15 intermediate revisions by 2 users not shown) | |||
Line 49: | Line 49: | ||
|102 |
|102 |
||
|0.86 |
|0.86 |
||
+ | |caused by air leaking to CHF3 channel |
||
+ | |[https://wiki.nanotech.ucsb.edu/w/images/d/d4/I2200203.pdf] |
||
⚫ | |||
+ | |1/7/2021 |
||
+ | |I22101 |
||
+ | |144 |
||
+ | |1.20 |
||
| |
| |
||
+ | |[https://wiki.nanotech.ucsb.edu/w/images/0/0c/I2210102.pdf] |
||
⚫ | |||
+ | |- |
||
+ | |5/19/2021 |
||
+ | |I22102 |
||
+ | |163 |
||
+ | |1.11 |
||
+ | |Etch time=130 sec |
||
+ | |[https://wiki.nanotech.ucsb.edu/w/images/4/4c/I2210214.pdf] |
||
+ | |- |
||
+ | |7/21/2021 |
||
+ | |I22103 |
||
+ | |134 |
||
+ | |1.09 |
||
+ | |Investigating reports of low etch rate |
||
+ | |[https://wiki.nanotech.ucsb.edu/w/images/c/c3/I2210308.pdf] |
||
+ | |- |
||
+ | |8/9/2021 |
||
+ | |I22104 |
||
+ | |147 |
||
+ | |1.06 |
||
+ | |Before etching diamond sample for 1 hour using Cl2/Ar |
||
+ | |[https://wiki.nanotech.ucsb.edu/w/images/2/28/I2210411.pdf] |
||
+ | |- |
||
+ | |8/9/2021 |
||
+ | |I22105 |
||
+ | |140 |
||
+ | |0.97 |
||
+ | |After etching diamond sample for 1 hour using Cl2/Ar |
||
+ | |[https://wiki.nanotech.ucsb.edu/w/images/2/26/I2210508.pdf] |
||
|} |
|} |
Revision as of 18:46, 10 August 2021
ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec | |||||
Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Averaged Sidewall Angle (o) | SEM Images |
10/5/2018 | SiO2#02 | 160 | 1.2 | 82.1 | [1] |
1/28/2019 | I21901 | 146 | 1.23 | [2] | |
3/6/2019 | I21904 | 151 | 1.23 | 85.6 | [3] |
7/18/2019 | I21905 | 162 | 1.37 | [4] | |
1/16/2020 | I22001 | 149 | 1.21 | [5] | |
8/9/2020 | I22002 | 102 | 0.86 | caused by air leaking to CHF3 channel | [6] |
1/7/2021 | I22101 | 144 | 1.20 | [7] | |
5/19/2021 | I22102 | 163 | 1.11 | Etch time=130 sec | [8] |
7/21/2021 | I22103 | 134 | 1.09 | Investigating reports of low etch rate | [9] |
8/9/2021 | I22104 | 147 | 1.06 | Before etching diamond sample for 1 hour using Cl2/Ar | [10] |
8/9/2021 | I22105 | 140 | 0.97 | After etching diamond sample for 1 hour using Cl2/Ar | [11] |