Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4"

From UCSB Nanofab Wiki
Jump to navigation Jump to search
(add data)
(add a SEM pic)
(21 intermediate revisions by 3 users not shown)
Line 15: Line 15:
 
|1.2
  
|1.2
 
|82.1
  
|82.1
−
|[https://www.nanotech.ucsb.edu/wiki/images/1/13/SiO2_Etch_using_ICP2-no_O2.pdf]
 +
|[https://wiki.nanotech.ucsb.edu/wiki/images/1/13/SiO2_Etch_using_ICP2-no_O2.pdf]
 
|-
  
|-
 
|1/28/2019
  
|1/28/2019
Line 22: Line 22:
 
|1.23
  
|1.23
 
|
  
|
−
|[https://www.nanotech.ucsb.edu/wiki/images/f/f9/SiO2_Etch_using_ICP2-no_O2-a.pdf]
 +
|[https://wiki.nanotech.ucsb.edu/wiki/images/f/f9/SiO2_Etch_using_ICP2-no_O2-a.pdf]
 
|-
  
|-
 
|3/6/2019
  
|3/6/2019
Line 29: Line 29:
 
|1.23
  
|1.23
 
|85.6
  
|85.6
−
|https://www.nanotech.ucsb.edu/wiki/images/8/87/SiO2_Etch_using_ICP2_no_O2-3-06-2019.pdf
 +
|[https://wiki.nanotech.ucsb.edu/wiki/images/8/87/SiO2_Etch_using_ICP2_no_O2-3-06-2019.pdf]
 
|-
  
|-
 
|7/18/2019
  
|7/18/2019
Line 36: Line 36:
 
|1.37
  
|1.37
 
|
  
|
  +
|[https://wiki.nanotech.ucsb.edu/wiki/images/2/23/I2190506.pdf]
  +
|-
  +
|1/16/2020
  +
|I22001
  +
|149
  +
|1.21
 
|
  
|
  +
|[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/I2200122.pdf]
  +
|-
  +
|8/9/2020
  +
|I22002
  +
|102
  +
|0.86
  +
|caused by air leaking to CHF3 channel
  +
|[https://wiki.nanotech.ucsb.edu/w/images/d/d4/I2200203.pdf]
  +
|-
  +
|1/7/2021
  +
|I22101
  +
|144
  +
|1.20
  +
|
  +
|[https://wiki.nanotech.ucsb.edu/w/images/0/0c/I2210102.pdf]
  +
|-
  +
|5/19/2021
  +
|I22102
  +
|163
  +
|1.11
  +
|Etch time=130 sec
  +
|[https://wiki.nanotech.ucsb.edu/w/images/4/4c/I2210214.pdf]
  +
|-
  +
|7/21/2021
  +
|I22103
  +
|134
  +
|1.09
  +
|Investigating reports of low etch rate
  +
|[https://wiki.nanotech.ucsb.edu/w/images/c/c3/I2210308.pdf]
  +
|-
  +
|8/9/2021
  +
|I22104
  +
|147
  +
|1.06
  +
|Before etching diamond sample for 1 hour using Cl2/Ar
  +
|[https://wiki.nanotech.ucsb.edu/w/images/2/28/I2210411.pdf]
  +
|-
  +
|8/9/2021
  +
|I22105
  +
|140
  +
|0.97
  +
|After etching diamond sample for 1 hour using Cl2/Ar
  +
|[https://wiki.nanotech.ucsb.edu/w/images/2/26/I2210508.pdf]
 
|}
  
|}

Revision as of 18:46, 10 August 2021

ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) SEM Images
10/5/2018 SiO2#02 160 1.2 82.1 [1]
1/28/2019 I21901 146 1.23 [2]
3/6/2019 I21904 151 1.23 85.6 [3]
7/18/2019 I21905 162 1.37 [4]
1/16/2020 I22001 149 1.21 [5]
8/9/2020 I22002 102 0.86 caused by air leaking to CHF3 channel [6]
1/7/2021 I22101 144 1.20 [7]
5/19/2021 I22102 163 1.11 Etch time=130 sec [8]
7/21/2021 I22103 134 1.09 Investigating reports of low etch rate [9]
8/9/2021 I22104 147 1.06 Before etching diamond sample for 1 hour using Cl2/Ar [10]
8/9/2021 I22105 140 0.97 After etching diamond sample for 1 hour using Cl2/Ar [11]
Retrieved from "https://wiki.nanofab.ucsb.edu/w/index.php?title=Test_Data_of_etching_SiO2_with_CHF3/CF4&oldid=159061"