Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4"

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|[https://wiki.nanotech.ucsb.edu/wiki/images/8/87/SiO2_Etch_using_ICP2_no_O2-3-06-2019.pdf]
 
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|1/16/2020
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|I22001
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|I22002
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|caused by air leaking to CHF3 channel
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|[https://wiki.nanotech.ucsb.edu/w/images/d/d4/I2200203.pdf]
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|I22101
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|I22102
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|Etch time=130 sec
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|[https://wiki.nanotech.ucsb.edu/w/images/4/4c/I2210214.pdf]
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|I22103
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|[https://wiki.nanotech.ucsb.edu/w/images/c/c3/I2210308.pdf]
 
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Revision as of 18:28, 22 July 2021

ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) SEM Images
10/5/2018 SiO2#02 160 1.2 82.1 [1]
1/28/2019 I21901 146 1.23 [2]
3/6/2019 I21904 151 1.23 85.6 [3]
7/18/2019 I21905 162 1.37 [4]
1/16/2020 I22001 149 1.21 [5]
8/9/2020 I22002 102 0.86 caused by air leaking to CHF3 channel [6]
1/7/2021 I22101 144 1.20 [7]
5/19/2021 I22102 163 1.11 Etch time=130 sec [8]
7/22/2021 I22103 134 1.09 [9]