Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4"

From UCSB Nanofab Wiki
Jump to navigation Jump to search
(adding a SEM pic)
(27 intermediate revisions by 3 users not shown)
Line 1: Line 1:
 
{| class="wikitable"
 
{| class="wikitable"
 
| colspan="5" |ICP#2:  0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
 
| colspan="5" |ICP#2:  0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
 +
|
 
|-
 
|-
 
|Date
 
|Date
Line 7: Line 8:
 
|Etch  Selectivity (SiO2/PR)
 
|Etch  Selectivity (SiO2/PR)
 
|Averaged  Sidewall Angle (<sup>o</sup>)
 
|Averaged  Sidewall Angle (<sup>o</sup>)
 +
|SEM Images
 
|-
 
|-
 
|10/5/2018
 
|10/5/2018
Line 13: Line 15:
 
|1.2
 
|1.2
 
|82.1
 
|82.1
 +
|[https://wiki.nanotech.ucsb.edu/wiki/images/1/13/SiO2_Etch_using_ICP2-no_O2.pdf]
 
|-
 
|-
|1/28/19
+
|1/28/2019
 
|I21901
 
|I21901
 
|146
 
|146
 
|1.23
 
|1.23
 
|
 
|
 +
|[https://wiki.nanotech.ucsb.edu/wiki/images/f/f9/SiO2_Etch_using_ICP2-no_O2-a.pdf]
 +
|-
 +
|3/6/2019
 +
|I21904
 +
|151
 +
|1.23
 +
|85.6
 +
|[https://wiki.nanotech.ucsb.edu/wiki/images/8/87/SiO2_Etch_using_ICP2_no_O2-3-06-2019.pdf]
 +
|-
 +
|7/18/2019
 +
|I21905
 +
|162
 +
|1.37
 +
|
 +
|[https://wiki.nanotech.ucsb.edu/wiki/images/2/23/I2190506.pdf]
 +
|-
 +
|1/16/2020
 +
|I22001
 +
|149
 +
|1.21
 +
|
 +
|[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/I2200122.pdf]
 +
|-
 +
|8/9/2020
 +
|I22002
 +
|102
 +
|0.86
 +
|caused by air leaking to CHF3 channel
 +
|[https://wiki.nanotech.ucsb.edu/w/images/d/d4/I2200203.pdf]
 +
|-
 +
|1/7/2021
 +
|I22101
 +
|144
 +
|1.20
 +
|
 +
|[https://wiki.nanotech.ucsb.edu/w/images/0/0c/I2210102.pdf]
 +
|-
 +
|5/19/2021
 +
|I22102
 +
|163
 +
|1.11
 +
|Etch time=130 sec
 +
|[https://wiki.nanotech.ucsb.edu/w/images/4/4c/I2210214.pdf]
 +
|-
 +
|7/22/2021
 +
|I22103
 +
|134
 +
|1.09
 +
|
 +
|[https://wiki.nanotech.ucsb.edu/w/images/c/c3/I2210308.pdf]
 
|}
 
|}

Revision as of 18:28, 22 July 2021

ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) SEM Images
10/5/2018 SiO2#02 160 1.2 82.1 [1]
1/28/2019 I21901 146 1.23 [2]
3/6/2019 I21904 151 1.23 85.6 [3]
7/18/2019 I21905 162 1.37 [4]
1/16/2020 I22001 149 1.21 [5]
8/9/2020 I22002 102 0.86 caused by air leaking to CHF3 channel [6]
1/7/2021 I22101 144 1.20 [7]
5/19/2021 I22102 163 1.11 Etch time=130 sec [8]
7/22/2021 I22103 134 1.09 [9]