Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4"
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− | | colspan="5" |ICP# |
+ | | colspan="5" |ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec |
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|Date |
|Date |
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|Etch Selectivity (SiO2/PR) |
|Etch Selectivity (SiO2/PR) |
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|Averaged Sidewall Angle (<sup>o</sup>) |
|Averaged Sidewall Angle (<sup>o</sup>) |
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+ | |SEM Images |
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+ | |- |
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+ | |10/5/2018 |
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+ | |SiO2#02 |
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+ | |160 |
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+ | |1.2 |
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+ | |82.1 |
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|1/28/2019 |
|1/28/2019 |
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+ | |I21901 |
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− | |I11901 |
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− | | |
+ | |146 |
− | |1. |
+ | |1.23 |
+ | | |
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+ | |[https://wiki.nanotech.ucsb.edu/wiki/images/f/f9/SiO2_Etch_using_ICP2-no_O2-a.pdf] |
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+ | |- |
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+ | |3/6/2019 |
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+ | |I21904 |
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+ | |151 |
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+ | |1.23 |
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+ | |85.6 |
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+ | |[https://wiki.nanotech.ucsb.edu/wiki/images/8/87/SiO2_Etch_using_ICP2_no_O2-3-06-2019.pdf] |
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+ | |- |
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+ | |7/18/2019 |
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+ | |I21905 |
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+ | |162 |
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+ | |1.37 |
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+ | | |
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+ | |[https://wiki.nanotech.ucsb.edu/wiki/images/2/23/I2190506.pdf] |
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+ | |- |
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+ | |1/16/2020 |
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+ | |I22001 |
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+ | |149 |
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+ | |1.21 |
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+ | | |
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+ | |[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/I2200122.pdf] |
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+ | |- |
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+ | |8/9/2020 |
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+ | |I22002 |
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+ | |102 |
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+ | |0.86 |
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+ | |caused by air leaking to CHF3 channel |
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+ | |[https://wiki.nanotech.ucsb.edu/w/images/d/d4/I2200203.pdf] |
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+ | |- |
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+ | |1/7/2021 |
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+ | |I22101 |
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+ | |144 |
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+ | |1.20 |
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| |
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+ | |[https://wiki.nanotech.ucsb.edu/w/images/0/0c/I2210102.pdf] |
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Revision as of 19:42, 8 January 2021
ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec | |||||
Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Averaged Sidewall Angle (o) | SEM Images |
10/5/2018 | SiO2#02 | 160 | 1.2 | 82.1 | [1] |
1/28/2019 | I21901 | 146 | 1.23 | [2] | |
3/6/2019 | I21904 | 151 | 1.23 | 85.6 | [3] |
7/18/2019 | I21905 | 162 | 1.37 | [4] | |
1/16/2020 | I22001 | 149 | 1.21 | [5] | |
8/9/2020 | I22002 | 102 | 0.86 | caused by air leaking to CHF3 channel | [6] |
1/7/2021 | I22101 | 144 | 1.20 | [7] |