Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4"

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| colspan="5" |ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
  
| colspan="5" |ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
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|
 
|-
  
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|Date
  
|Date
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|Etch Selectivity (SiO2/PR)
  
|Etch Selectivity (SiO2/PR)
 
|Averaged Sidewall Angle (<sup>o</sup>)
  
|Averaged Sidewall Angle (<sup>o</sup>)
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|SEM Images
 
|-
  
|-
 
|10/5/2018
  
|10/5/2018
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|1.2
  
|1.2
 
|82.1
  
|82.1
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|[https://wiki.nanotech.ucsb.edu/wiki/images/1/13/SiO2_Etch_using_ICP2-no_O2.pdf]
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|-
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|1/28/2019
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|I21901
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|146
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|1.23
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|
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|[https://wiki.nanotech.ucsb.edu/wiki/images/f/f9/SiO2_Etch_using_ICP2-no_O2-a.pdf]
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|-
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|3/6/2019
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|I21904
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|151
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|1.23
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|85.6
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|[https://wiki.nanotech.ucsb.edu/wiki/images/8/87/SiO2_Etch_using_ICP2_no_O2-3-06-2019.pdf]
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|-
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|7/18/2019
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|I21905
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|162
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|1.37
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|
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|[https://wiki.nanotech.ucsb.edu/wiki/images/2/23/I2190506.pdf]
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|-
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|1/16/2020
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|I22001
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|149
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|1.21
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|
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|[https://wiki.nanotech.ucsb.edu/wiki/images/0/09/I2200122.pdf]
 
|}
  
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Revision as of 18:29, 6 April 2020

ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) SEM Images
10/5/2018 SiO2#02 160 1.2 82.1 [1]
1/28/2019 I21901 146 1.23 [2]
3/6/2019 I21904 151 1.23 85.6 [3]
7/18/2019 I21905 162 1.37 [4]
1/16/2020 I22001 149 1.21 [5]
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