Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4"

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{| class="wikitable"
 
| colspan="5" |ICP#2:  0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
 
| colspan="5" |ICP#2:  0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
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|Date
 
|Date
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|Etch  Selectivity (SiO2/PR)
 
|Etch  Selectivity (SiO2/PR)
 
|Averaged  Sidewall Angle (<sup>o</sup>)
 
|Averaged  Sidewall Angle (<sup>o</sup>)
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|SEM Images
 
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|10/5/2018
 
|10/5/2018
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|1.2
 
|1.2
 
|82.1
 
|82.1
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|1/28/2019
 
|1/28/2019
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|1.23
 
|1.23
 
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|[https://www.nanotech.ucsb.edu/wiki/images/f/f9/SiO2_Etch_using_ICP2-no_O2-a.pdf]
 
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[https://www.nanotech.ucsb.edu/wiki/images/f/f9/SiO2_Etch_using_ICP2-no_O2-a.pdf]
 

Revision as of 00:07, 30 January 2019

ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) SEM Images
10/5/2018 SiO2#02 160 1.2 82.1
1/28/2019 I21901 146 1.23 [1]