Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4"
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Revision as of 11:43, 29 January 2019
|ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec|
|Date||Sample#||Etch Rate (nm/min)||Etch Selectivity (SiO2/PR)||Averaged Sidewall Angle (o)|