Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4"

From UCSB Nanofab Wiki
Jump to navigation Jump to search
(Blanked the page)
Line 1: Line 1:
{| class="wikitable"
+
 
| colspan="5" |ICP#2:  0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
 
|-
 
|Date
 
|Sample#
 
|Etch  Rate (nm/min)
 
|Etch  Selectivity (SiO2/PR)
 
|Averaged  Sidewall Angle (<sup>o</sup>)
 
|-
 
|10-8-2018
 
|SiO2#02
 
|160
 
|1.23
 
|82.1
 
|-
 
|1/28/2019
 
|I21901
 
|146
 
|1.23
 
|
 
|}
 
[https://www.nanotech.ucsb.edu/wiki/index.php/File:SiO2_Etch_using_ICP2-no_O2-a.pdf File:SiO2 Etch using ICP2-no O2-a.pdf]
 

Revision as of 11:30, 29 January 2019