Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4"

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{| class="wikitable"
 
{| class="wikitable"
| colspan="5" |ICP#1:  0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
+
| colspan="5" |ICP#2:  0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
 
|-
 
|-
 
|Date
 
|Date
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|Etch  Selectivity (SiO2/PR)
 
|Etch  Selectivity (SiO2/PR)
 
|Averaged  Sidewall Angle (<sup>o</sup>)
 
|Averaged  Sidewall Angle (<sup>o</sup>)
 +
|-
 +
|10-8-2018
 +
|SiO2#02
 +
|160
 +
|1.23
 +
|82.1
 
|-
 
|-
 
|1/28/2019
 
|1/28/2019
|I11901
+
|I21901
|110
+
|146
|1.35
+
|1.23
 
|
 
|
 
|}
 
|}
 
[https://www.nanotech.ucsb.edu/wiki/index.php/File:SiO2_Etch_using_ICP2-no_O2-a.pdf File:SiO2 Etch using ICP2-no O2-a.pdf]
 
[https://www.nanotech.ucsb.edu/wiki/index.php/File:SiO2_Etch_using_ICP2-no_O2-a.pdf File:SiO2 Etch using ICP2-no O2-a.pdf]

Revision as of 11:26, 29 January 2019

ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o)
10-8-2018 SiO2#02 160 1.23 82.1
1/28/2019 I21901 146 1.23

File:SiO2 Etch using ICP2-no O2-a.pdf