Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4"

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Revision as of 11:22, 29 January 2019

ICP#1: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o)
1/28/2019 I11901 110 1.35

File:SiO2 Etch using ICP2-no O2-a.pdf

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