Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4"

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[[:File:SiO2 Etch using ICP2-no O2.pdf]]

Revision as of 08:33, 9 October 2018

ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o)
10/5/2018 SiO2#02 160 1.2 82.1

File:SiO2 Etch using ICP2-no O2.pdf