Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4"
Jump to navigation
Jump to search
| Line 14: | Line 14: | ||
|82.1 |
|82.1 |
||
|} |
|} |
||
| + | [[:File:SiO2 Etch using ICP2-no O2.pdf]] |
||
Revision as of 08:33, 9 October 2018
| ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec | ||||
| Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Averaged Sidewall Angle (o) |
| 10/5/2018 | SiO2#02 | 160 | 1.2 | 82.1 |