Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4"

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{| class="wikitable"
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| colspan="5" |ICP#2:  0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec
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|-
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|Date
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|Sample#
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|Etch  Rate (nm/min)
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|Etch  Selectivity (SiO2/PR)
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|Averaged  Sidewall Angle (<sup>o</sup>)
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|-
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|10/5/2018
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|SiO2#02
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|160
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|1.2
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|82.1
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|}
 
[[:File:SiO2 Etch using ICP2-no O2.pdf]]
 
[[:File:SiO2 Etch using ICP2-no O2.pdf]]

Revision as of 08:09, 9 October 2018

ICP#2: 0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o)
10/5/2018 SiO2#02 160 1.2 82.1

File:SiO2 Etch using ICP2-no O2.pdf