Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4"
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| + | {| class="wikitable" |
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| + | | colspan="5" |ICP#2: 0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec |
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| + | |- |
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| + | |Date |
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| + | |Sample# |
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| + | |Etch Rate (nm/min) |
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| + | |Etch Selectivity (SiO2/PR) |
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| + | |Averaged Sidewall Angle (<sup>o</sup>) |
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| + | |- |
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| + | |10/5/2018 |
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| + | |SiO2#02 |
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| + | |160 |
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| + | |1.2 |
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| + | |82.1 |
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| + | |} |
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[[:File:SiO2 Etch using ICP2-no O2.pdf]] |
[[:File:SiO2 Etch using ICP2-no O2.pdf]] |
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Revision as of 08:09, 9 October 2018
| ICP#2: 0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec | ||||
| Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Averaged Sidewall Angle (o) |
| 10/5/2018 | SiO2#02 | 160 | 1.2 | 82.1 |