Difference between revisions of "Test Data of etching SiO2 with CHF3/CF4"

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!Comments
 
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|[https://wiki.nanotech.ucsb.edu/w/images/a/a0/30D_10302022_pan2_002.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/6/6d/CS_10302022_pan2_002.jpg <nowiki>[CS]</nowiki>]
 
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|9/26/22
 
|9/26/22

Revision as of 12:33, 3 October 2022

ICP#2: 0.5Pa, 50/900W, CHF3/CF4=10/30 sccm, time=210 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Comments SEM Images;
10/3/22 ND_Pan2_100322 143.1 1.23 [30D] [CS]
9/26/22 ND_Pan2n_092622 131.4 1.40 Samples from new wafer [30D] [CS]
9/26/22 ND_Pan2o_092622 130.6 1.14 Samples from old wafer [CS]
9/12/22 ND_Pan2_091222 156 1.33 Higher etch rate/selectivity, may be due to new Si wafer [30D] [CS]
8/26/22 ND_Pan2_082622 144.3 1.22 [30D] [CS]
8/8/2022 ND_Pan2_080822 134.3 1.12 [30D] [CS]
7/29/2022 ND_Pan2_072922 142.3 1.20 [30D] [CS]
7/15/2022 ND_Pan2_071522 139.1 1.20 [45D][CS]
5/5/2022 NP_ICP2_07 170 1.11 Right after Quartz Top-Plate Temperature reduced 100°C-->50°C.

Etch Characteristics look similar to before.

[1] [2]
4/26/2022 NP_ICP2_06 176.3 1.14 [1] [2]
4/20/2022 NP_ICP2_05 171.7 1.13 [1] [2]
4/12/2022 NP_ICP2_04 167.9 1.17 [1] [2]
3/30/2022 NP_ICP2_03 164 1.23 [1] [2]
3/8/2022 NP_ICP2_02 144 1.02 [1] [2]
3/2/2022 NP_ICP2_01 169.6 1.29 [1] [2]
8/9/2021 I22105 140 0.97 After etching diamond sample for 1 hour using Cl2/Ar. Found

chamber/etches are ok.

[1]
8/9/2021 I22104 147 1.06 Before etching diamond sample for 1 hour using Cl2/Ar [2]
7/21/2021 I22103 134 1.09 Investigating reports of low etch rate [3]
5/19/2021 I22102 163 1.11 Etch time=130 sec [4]
1/7/2021 I22101 144 1.20 [5]
8/9/2020 I22002 102 0.86 caused by air leaking to CHF3 channel [6]
1/16/2020 I22001 149 1.21 [7]
7/18/2019 I21905 162 1.37 [8]
3/6/2019 I21904 151 1.23 85.6 [9]
1/28/2019 I21901 146 1.23 [10]
10/5/2018 SiO2#02 160 1.2 82.1 [11]


Alternate Data (not updated)

We stopped taking data for the following table in 2019, use the above data instead.