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{| class="wikitable"
| colspan="5" |ICP#2:  0.5Pa, 50/500W, CHF3/CF4/O2=35/5/10sccm, time=210 sec
|-
|Date
|Sample#
|Etch  Rate (nm/min)
|Etch  Selectivity (SiO2/PR)
|Averaged  Sidewall Angle (<sup>o</sup>)
|-
|10/5/2018
|SiO2#02
|160
|1.2
|82.1
|}
[[:File:SiO2 Etch using ICP2-no O2.pdf]]

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