Test Data of Etching SiO2 with CHF3/CF4-Fluorine ICP Etcher
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Fluorine ICP: 3.8mT, 50/900W, CHF3/CF4=10/30sccm, time=90 sec | ||||||
Date | Sample # | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Averaged Sidewalls Angle | Observations/Notes | SEM Images (45d, cross section) |
01/09/23 | ND_FL_010923 | 263.3 | 1.31 | [30D][CS] | ||
12/14/22 | ND_FL_121422 | 266.7 | 1.29 | [30D][CS] | ||
12/09/22 | ND_FL_120922 | 260 | 1.26 | [30D][CS] | ||
11/18/22 | ND_FL_111822 | 268 | 1.01 | [30D][CS] | ||
11/07/22 | ND_FL_110722 | 264.7 | 0.96 | [30D] [CS] | ||
10/24/22 | ND_FL_102422 | 266.7 | 1.22 | [30D][CS] | ||
10/14/22 | ND_FL_101422 | 249 | 0.82 | Image drifted very slightly
in SEM. May account for low selectivity. |
[30D] [CS] | |
10/3/22 | ND_FL_100322 | 228 | 1.10 | Low etch rate. | [30D] [CS] | |
9/12/22 | ND_FL_091222 | 278 | 1.33 | high selectivity, may be
due to new Si wafer |
[30D] [CS] | |
8/26/22 | ND_FL_082622 | 288 | 0.97 | Low selectivity/e. rate | [30D] [CS] | |
8/22/22 | ND_FL_082222 | 252.7 | 0.93 | Lower selectivity/e. rate | [40D] [CS] | |
8/19/22 | ND_Fl_081922 | 260.7 | 0.99 | Low selectivity/etch rate | [30D][CS] | |
Change in operator - SEMs below (by NP) are erroneously measured to the trench, instead of flat plane. | ||||||
5/18/22 | NP_SiO2_Fl_10 | 308.7 | 1.19 | still lower etch rate | [1] [2] | |
5/10/22 | NP_SiO2_Fl_09 | 307.3 | 1.15 | *etch rate seems lower* | [1] [2] | |
4/26/22 | NP_SiO2_Fl_08 | 344.7 | 1.4 | [1] [2] | ||
4/20/22 | NP_SiO2_Fl_07 | 354.7 | 1.11 | [1] [2] | ||
4/14/22 | NP_SiO2_Fl_06 | 352.7 | 1.11 | [1] [2] | ||
3/29/22 | NP_SiO2_Fl_05 | 334.7 | 1.07 | [1][2] | ||
3/09/22 | NP_SiO2_Fl_04 | 358.9 | 1.06 | [1] [2] | ||
3/02/22 | NP_SiO2_Fl_03 | 347 | 1.05 | [1] [2] | ||
2/23/22 | NP_SiO2_Fl_02 | 362.7 | 1.02 | [1] [2] |