Test Data of Etching SiO2 with CHF3/CF4-Fluorine ICP Etcher

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Revision as of 10:56, 8 March 2022 by Pakala (talk | contribs) (added new entry + SEM into Fl etcher historical data)
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  This page is under construction - we are in the process of standardizing and collecting process control data for this tool.  -- Demis 2022-02-11
Fluorine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm, time=90 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) Notes/Observations SEM Images
1/28/2021 FE2102 309 0.99 [1]


Fluorine ICP: 3.8mT, 50/900W, CHF3/CF4=10/30sccm, time=210 sec'
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) Observations/Notes SEM Image
11/5/2021 SOFL01 136 1.2 [2]
02/09/22 NP_SiO2_Fl_01 Etched for 210s, all of PR was etched off [1]
02/23/22 NP_SiO2_Fl_02 362.7 Etched for 90s [1] [2]
03/02/22 NP_SiO2_Fl_03 ~360 - 370 Etched for 90s [1] [2]