Test Data of Etching SiO2 with CHF3/CF4-Fluorine ICP Etcher

From UCSB Nanofab Wiki
Revision as of 12:11, 11 February 2022 by John d (talk | contribs) (pasted Ning's 2nd data table, hilighted recipe changes and comment about data being "in progress")
Jump to navigation Jump to search
  This page is under construction - we are in the process of standardizing and collecting process control data for this tool.  -- Demis 2022-02-11
Fluorine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm, time=90 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) SEM Images
1/28/2021 FE2102 309 0.99 [1]


Fluorine ICP: 3.8mT, 50/900W, CHF3/CF4=10/30sccm, time=210 sec'
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) SEM Image
11/5/2021 SOFL01 136 1.2 [2]