Test Data of Etching SiO2 with CHF3/CF4-Fluorine ICP Etcher
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This page is under construction - we are in the process of standardizing and collecting process control data for this tool. -- Demis 2022-02-11
| Fluorine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm, time=90 sec | |||||
| Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Averaged Sidewall Angle (o) | SEM Images |
| 1/28/2021 | FE2102 | 309 | 0.99 | [1] | |
| Fluorine ICP: 3.8mT, 50/900W, CHF3/CF4=10/30sccm, time=210 sec' | |||||
| Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Averaged Sidewall Angle (o) | SEM Image |
| 11/5/2021 | SOFL01 | 136 | 1.2 | [2] | |