Test Data of Etching SiO2 with CHF3/CF4-Fluorine ICP Etcher
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|Fluorine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm, time=90 sec|
|Date||Sample#||Etch Rate (nm/min)||Etch Selectivity (SiO2/PR)||Averaged Sidewall Angle (o)||SEM Images|