Difference between revisions of "Test Data of Etching SiO2 with CHF3/CF4-Fluorine ICP Etcher"

Revision as of 10:33, 11 May 2022

  This page is under construction - we are in the process of standardizing and collecting process control data for this tool.  -- Demis 2022-02-11

Fluorine ICP: 3.8mT, 50/900W, CHF3/CF4=10/30sccm, time=90 sec
Date	Sample #	Etch Rate (nm/min)	Etch Selectivity (SiO2/PR)	Averaged Sidewalls Angle	Observations/Notes	SEM Images (45d, cross section)
5/10/22	NP_SiO2_Fl_09	307.3	1.15		etch rate seems lower	[1] [2]
4/26/22	NP_SiO2_Fl_08	344.7	1.4			[1] [2]
4/20/22	NP_SiO2_Fl_07	354.7	1.11			[1] [2]
4/14/22	NP_SiO2_Fl_06	352.7	1.11			[1] [2]
3/29/22	NP_SiO2_Fl_05	334.7	1.07			[1][2]
3/09/22	NP_SiO2_Fl_04	358.9	1.06			[1] [2]
3/02/22	NP_SiO2_Fl_03	347	1.05			[1] [2]
2/23/22	NP_SiO2_Fl_02	362.7	1.02			[1] [2]

Fluorine ICP: 3.8mT, 50/900W, CHF3/CF4=10/30sccm, time=210 sec'
Date	Sample#	Etch Rate (nm/min)	Etch Selectivity (SiO2/PR)	Averaged Sidewall Angle (^o)	Observations/Notes	SEM Image
11/5/2021	SOFL01	136	1.2			[1]
02/09/22	NP_SiO2_Fl_01				Etched for 210s, all of PR was etched off	[1]

Fluorine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm, time=90 sec
Date	Sample#	Etch Rate (nm/min)	Etch Selectivity (SiO2/PR)	Averaged Sidewall Angle (^o)	Notes/Observations	SEM Images
1/28/2021	FE2102	309	0.99			[2]

@@ Line 12: / Line 12: @@
 |Observations/Notes
 |SEM Images (45d, cross section)
+|-
+|5/10/22
+|NP_SiO2_Fl_09
+|307.3
+|1.15
+|
+|*etch rate seems lower*
+|[https://wiki.nanotech.ucsb.edu/w/images/a/a8/SiO2_Fl_09_45D_005.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/a/a7/SiO2_Fl_09_CS_006.jpg <nowiki>[2]</nowiki>]
 |-
 |4/26/22
 |NP_SiO2_Fl_08
 |344.7
-|
+|1.4
 |
 |
@@ Line 24: / Line 32: @@
 |NP_SiO2_Fl_07
 |354.7
+|1.11
-|
 |
 |
@@ Line 32: / Line 40: @@
 |NP_SiO2_Fl_06
 |352.7
+|1.11
-|*need to measure PR
 |
 |