Difference between revisions of "Test Data of Etching SiO2 with CHF3/CF4-Fluorine ICP Etcher"

Revision as of 11:14, 20 April 2022

  This page is under construction - we are in the process of standardizing and collecting process control data for this tool.  -- Demis 2022-02-11

Fluorine ICP: 3.8mT, 50/900W, CHF3/CF4=10/30sccm, time=90 sec
Date	Sample #	Etch Rate (nm/min)	Etch Selectivity (SiO2/PR)	Averaged Sidewalls Angle	Observations/Notes	SEM Images (45d, cross section)
4/14/22	NP_SiO2_Fl_06	352.7	*need to measure PR			[1] [2]
3/29/2022	NP_SiO2_Fl_05	334.7	1.07			[1][2]
3/09/22	NP_SiO2_Fl_04	358.9	1.06			[1] [2]
3/02/22	NP_SiO2_Fl_03	347	1.05			[1] [2]
2/23/22	NP_SiO2_Fl_02	362.7	1.02			[1] [2]

Fluorine ICP: 3.8mT, 50/900W, CHF3/CF4=10/30sccm, time=210 sec'
Date	Sample#	Etch Rate (nm/min)	Etch Selectivity (SiO2/PR)	Averaged Sidewall Angle (^o)	Observations/Notes	SEM Image
11/5/2021	SOFL01	136	1.2			[1]
02/09/22	NP_SiO2_Fl_01				Etched for 210s, all of PR was etched off	[1]

Fluorine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm, time=90 sec
Date	Sample#	Etch Rate (nm/min)	Etch Selectivity (SiO2/PR)	Averaged Sidewall Angle (^o)	Notes/Observations	SEM Images
1/28/2021	FE2102	309	0.99			[2]

@@ Line 19: / Line 19: @@
 |
 |
 |[https://wiki.nanotech.ucsb.edu/w/images/7/70/SiO2_Fl_06_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/6/68/SiO2_Fl_06_CS_002.jpg <nowiki>[2]</nowiki>]
 |-
 |3/29/2022
@@ Line 39: / Line 39: @@
 |3/02/22
 |NP_SiO2_Fl_03
+|347
-|~360 - 370
 |1.05
 |
 |
-|[https://wiki.nanotech.ucsb.edu/w/images/b/b7/SiO2_Fl_03_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/3/3f/SiO2_Fl_03_CS_001.jpg <nowiki>[2]</nowiki>]
+|[https://wiki.nanotech.ucsb.edu/w/images/b/b7/SiO2_Fl_03_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/3/38/SiO2_Fl_03_CS_004.jpg <nowiki>[2]</nowiki>]
 |-
 |2/23/22