Difference between revisions of "Test Data of Etching SiO2 with CHF3/CF4-Fluorine ICP Etcher"

Revision as of 10:29, 30 March 2022

  This page is under construction - we are in the process of standardizing and collecting process control data for this tool.  -- Demis 2022-02-11

Fluorine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm, time=90 sec
Date	Sample#	Etch Rate (nm/min)	Etch Selectivity (SiO2/PR)	Averaged Sidewall Angle (^o)	Notes/Observations	SEM Images
1/28/2021	FE2102	309	0.99			[1]

Fluorine ICP: 3.8mT, 50/900W, CHF3/CF4=10/30sccm, time=210 sec'
Date	Sample#	Etch Rate (nm/min)	Etch Selectivity (SiO2/PR)	Averaged Sidewall Angle (^o)	Observations/Notes	SEM Image
11/5/2021	SOFL01	136	1.2			[2]
02/09/22	NP_SiO2_Fl_01				Etched for 210s, all of PR was etched off	[1]

Fluorine ICP: 3.8mT, 50/900W, CHF3/CF4=10/30sccm, time=90 sec
Date	Sample #	Etch Rate (nm/min)	Etch Selectivity (SiO2/PR)	Averaged Sidewalls Angle	Observations/Notes	SEM Images (45d, cross section)
02/23/22	NP_SiO2_Fl_02	362.7	1.02			[1] [2]
03/02/22	NP_SiO2_Fl_03	~360 - 370	1.05			[1] [2]
3/09/22	NP_SiO2_Fl_04	358.9	1.06			[1] [2]
3/29/2022	NP_SiO2_Fl_05	334.7	1.07			[1][2]

@@ Line 57: / Line 57: @@
 |Etch Rate (nm/min)
 |Etch Selectivity (SiO2/PR)
 |Averaged Sidewalls Angle
 |Observations/Notes
 |SEM Images (45d, cross section)
@@ Line 64: / Line 64: @@
 |NP_SiO2_Fl_02
 |362.7
+|1.02
-|
 |
 |
@@ Line 72: / Line 72: @@
 |NP_SiO2_Fl_03
 |~360 - 370
+|1.05
-|
 |
 |
@@ Line 80: / Line 80: @@
 |NP_SiO2_Fl_04
 |358.9
+|1.06
-|
 |
 |
 |[https://wiki.nanotech.ucsb.edu/w/images/f/f3/SiO2_FL_04_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/d/db/SiO2_Fl_04_CS_005.jpg <nowiki>[2]</nowiki>]
+|-
+|3/29/2022
+|NP_SiO2_Fl_05
+|334.7
+|1.07
+|
+|
+|[https://wiki.nanotech.ucsb.edu/w/images/a/a3/SiO2_Fl_03_45D_002.jpg <nowiki>[1]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/e/e2/SiO2_Fl_05_CS_002.jpg <nowiki>[2]</nowiki>]
 |}