Difference between revisions of "Test Data of Etching SiO2 with CHF3/CF4-Fluorine ICP Etcher"

Revision as of 11:56, 8 March 2022

  This page is under construction - we are in the process of standardizing and collecting process control data for this tool.  -- Demis 2022-02-11

Fluorine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm, time=90 sec
Date	Sample#	Etch Rate (nm/min)	Etch Selectivity (SiO2/PR)	Averaged Sidewall Angle (^o)	Notes/Observations	SEM Images
1/28/2021	FE2102	309	0.99			[1]

Fluorine ICP: 3.8mT, 50/900W, CHF3/CF4=10/30sccm, time=210 sec'
Date	Sample#	Etch Rate (nm/min)	Etch Selectivity (SiO2/PR)	Averaged Sidewall Angle (^o)	Observations/Notes	SEM Image
11/5/2021	SOFL01	136	1.2			[2]
02/09/22	NP_SiO2_Fl_01				Etched for 210s, all of PR was etched off	[1]
02/23/22	NP_SiO2_Fl_02	362.7			Etched for 90s	[1] [2]
03/02/22	NP_SiO2_Fl_03	~360 - 370			Etched for 90s	[1] [2]

@@ Line 60: / Line 60: @@
 |03/02/22
 |NP_SiO2_Fl_03
+|~360 - 370
-|
 |
 |
 |Etched for 90s
+|[https://wiki.nanotech.ucsb.edu/w/images/b/b7/SiO2_Fl_03_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/3/3f/SiO2_Fl_03_CS_001.jpg <nowiki>[2]</nowiki>]
-|
 |}