Difference between revisions of "Test Data of Etching SiO2 with CHF3/CF4-Fluorine ICP Etcher"

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(pasted Ning's 2nd data table, hilighted recipe changes and comment about data being "in progress")
m (Added SEMs and some notes to new etch cals done on FL etcher)
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{| class="wikitable"
  
{| class="wikitable"
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| colspan="6" |Fluorine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm, time=90 sec
 +
| colspan="7" |Fluorine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm, time=90 sec
 
|-
  
|-
 
|Date
  
|Date
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|Etch Selectivity (SiO2/PR)
  
|Etch Selectivity (SiO2/PR)
 
|Averaged Sidewall Angle (<sup>o</sup>)
  
|Averaged Sidewall Angle (<sup>o</sup>)
  +
|Notes/Observations
 
|SEM Images
  
|SEM Images
 
|-
  
|-
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|309
  
|309
 
|0.99
  
|0.99
  +
|
 
|
  
|
 
|[https://wiki.nanotech.ucsb.edu/w/images/0/0b/FE210206.pdf]
  
|[https://wiki.nanotech.ucsb.edu/w/images/0/0b/FE210206.pdf]
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{| class="wikitable"
  
{| class="wikitable"
 
| colspan="6" |Fluorine ICP: 3.8mT, 50/'''900W''', CHF3/CF4=10/30sccm, time='''210 sec''''
  
| colspan="6" |Fluorine ICP: 3.8mT, 50/'''900W''', CHF3/CF4=10/30sccm, time='''210 sec''''
  +
|
 
|-
  
|-
 
|Date
  
|Date
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|Etch Selectivity (SiO2/PR)
  
|Etch Selectivity (SiO2/PR)
 
|Averaged Sidewall Angle (<sup>o</sup>)
  
|Averaged Sidewall Angle (<sup>o</sup>)
  +
|Observations/Notes
 
|SEM Image
  
|SEM Image
 
|-
  
|-
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|136
  
|136
 
|1.2
  
|1.2
  +
|
 
|
  
|
 
|[https://wiki.nanotech.ucsb.edu/w/images/f/fe/SOFL0103.pdf]
  
|[https://wiki.nanotech.ucsb.edu/w/images/f/fe/SOFL0103.pdf]
  +
|-
  +
|02/09/22
  +
|NP_SiO2_Fl_01
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|
  +
|
  +
|
  +
|Etched for 210s, all of PR was etched off
  +
|[https://wiki.nanotech.ucsb.edu/w/images/8/80/SiO2_Fl_01_45D_002.jpg <nowiki>[1]</nowiki>]
  +
|-
  +
|02/23/22
  +
|NP_SiO2_Fl_02
  +
|362.7
  +
|
  +
|
  +
|Etched for 90s
  +
|[https://wiki.nanotech.ucsb.edu/w/images/c/c8/SiO2_Fl_02_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/8/89/SiO2_Fl_02_CS_001.jpg <nowiki>[2]</nowiki>]
  +
|-
  +
|03/02/22
  +
|NP_SiO2_Fl_03
  +
|
  +
|
  +
|
  +
|Etched for 90s
  +
|
 
|}
  
|}

Revision as of 10:59, 2 March 2022

  This page is under construction - we are in the process of standardizing and collecting process control data for this tool.  -- Demis 2022-02-11
Fluorine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm, time=90 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) Notes/Observations SEM Images
1/28/2021 FE2102 309 0.99 [1]


Fluorine ICP: 3.8mT, 50/900W, CHF3/CF4=10/30sccm, time=210 sec'
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) Observations/Notes SEM Image
11/5/2021 SOFL01 136 1.2 [2]
02/09/22 NP_SiO2_Fl_01 Etched for 210s, all of PR was etched off [1]
02/23/22 NP_SiO2_Fl_02 362.7 Etched for 90s [1] [2]
03/02/22 NP_SiO2_Fl_03 Etched for 90s
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