Difference between revisions of "Test Data of Etching SiO2 with CHF3/CF4-Fluorine ICP Etcher"
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(pasted Ning's 2nd data table, hilighted recipe changes and comment about data being "in progress") |
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+ | '''''This page is under construction - we are in the process of standardizing and collecting process control data for this tool. -- Demis 2022-02-11''''' |
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{| class="wikitable" |
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| colspan="6" |Fluorine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm, time=90 sec |
| colspan="6" |Fluorine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm, time=90 sec |
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|[https://wiki.nanotech.ucsb.edu/w/images/0/0b/FE210206.pdf] |
|[https://wiki.nanotech.ucsb.edu/w/images/0/0b/FE210206.pdf] |
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+ | |} |
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+ | {| class="wikitable" |
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+ | | colspan="6" |Fluorine ICP: 3.8mT, 50/'''900W''', CHF3/CF4=10/30sccm, time='''210 sec'''' |
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+ | |- |
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+ | |Date |
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+ | |Sample# |
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+ | |Etch Rate (nm/min) |
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+ | |Etch Selectivity (SiO2/PR) |
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+ | |Averaged Sidewall Angle (<sup>o</sup>) |
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+ | |SEM Image |
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+ | |- |
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+ | |11/5/2021 |
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+ | |SOFL01 |
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+ | |136 |
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+ | |1.2 |
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+ | | |
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+ | |[https://wiki.nanotech.ucsb.edu/w/images/f/fe/SOFL0103.pdf] |
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Revision as of 13:11, 11 February 2022
This page is under construction - we are in the process of standardizing and collecting process control data for this tool. -- Demis 2022-02-11
Fluorine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm, time=90 sec | |||||
Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Averaged Sidewall Angle (o) | SEM Images |
1/28/2021 | FE2102 | 309 | 0.99 | [1] |
Fluorine ICP: 3.8mT, 50/900W, CHF3/CF4=10/30sccm, time=210 sec' | |||||
Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Averaged Sidewall Angle (o) | SEM Image |
11/5/2021 | SOFL01 | 136 | 1.2 | [2] |