Difference between revisions of "Test Data of Etching SiO2 with CHF3/CF4-Fluorine ICP Etcher"
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+ | | colspan="7" |Fluorine ICP: 3.8mT, 50/'''900W''', CHF3/CF4=10/30sccm, time='''90 sec''' |
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+ | |- |
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+ | |Date |
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+ | |Sample # |
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+ | |Etch Rate (nm/min) |
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+ | |Etch Selectivity (SiO2/PR) |
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+ | |Averaged Sidewalls Angle |
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+ | |Observations/Notes |
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+ | |SEM Images (45d, cross section) |
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|[https://wiki.nanotech.ucsb.edu/w/images/c/c8/SiO2_Fl_02_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/8/89/SiO2_Fl_02_CS_001.jpg <nowiki>[2]</nowiki>] |
|[https://wiki.nanotech.ucsb.edu/w/images/c/c8/SiO2_Fl_02_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/8/89/SiO2_Fl_02_CS_001.jpg <nowiki>[2]</nowiki>] |
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|[https://wiki.nanotech.ucsb.edu/w/images/b/b7/SiO2_Fl_03_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/3/3f/SiO2_Fl_03_CS_001.jpg <nowiki>[2]</nowiki>] |
|[https://wiki.nanotech.ucsb.edu/w/images/b/b7/SiO2_Fl_03_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/3/3f/SiO2_Fl_03_CS_001.jpg <nowiki>[2]</nowiki>] |
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+ | |- |
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+ | |3/09/22 |
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+ | |NP_SiO2_Fl_04 |
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+ | |358.9 |
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+ | |[https://wiki.nanotech.ucsb.edu/w/images/f/f3/SiO2_FL_04_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/d/db/SiO2_Fl_04_CS_005.jpg <nowiki>[2]</nowiki>] |
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Revision as of 10:35, 9 March 2022
This page is under construction - we are in the process of standardizing and collecting process control data for this tool. -- Demis 2022-02-11
Fluorine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm, time=90 sec | ||||||
Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Averaged Sidewall Angle (o) | Notes/Observations | SEM Images |
1/28/2021 | FE2102 | 309 | 0.99 | [1] |
Fluorine ICP: 3.8mT, 50/900W, CHF3/CF4=10/30sccm, time=210 sec' | ||||||
Date | Sample# | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Averaged Sidewall Angle (o) | Observations/Notes | SEM Image |
11/5/2021 | SOFL01 | 136 | 1.2 | [2] | ||
02/09/22 | NP_SiO2_Fl_01 | Etched for 210s, all of PR was etched off | [1] |
Fluorine ICP: 3.8mT, 50/900W, CHF3/CF4=10/30sccm, time=90 sec | ||||||
Date | Sample # | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Averaged Sidewalls Angle | Observations/Notes | SEM Images (45d, cross section) |
02/23/22 | NP_SiO2_Fl_02 | 362.7 | [1] [2] | |||
03/02/22 | NP_SiO2_Fl_03 | ~360 - 370 | [1] [2] | |||
3/09/22 | NP_SiO2_Fl_04 | 358.9 | [1] [2] |