Difference between revisions of "Test Data of Etching SiO2 with CHF3/CF4-Fluorine ICP Etcher"

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'''''This page is under construction - we are in the process of standardizing and collecting process control data for this tool. -- Demis 2022-02-11'''''
  
'''''This page is under construction - we are in the process of standardizing and collecting process control data for this tool. -- Demis 2022-02-11'''''
  +
   
 
{| class="wikitable"
  
{| class="wikitable"
−
| colspan="7" |Fluorine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm, time=90 sec
 +
| colspan="7" |Fluorine ICP: 3.8mT, 50/'''900W''', CHF3/CF4=10/30sccm, time='''90 sec'''
 
|-
  
|-
 
|Date
  
|Date
−
|Sample#
 +
|Sample #
−
|Etch Rate (nm/min)
 +
|Etch Rate (nm/min)
−
|Etch Selectivity (SiO2/PR)
 +
|Etch Selectivity (SiO2/PR)
−
|Averaged Sidewall Angle (<sup>o</sup>)
 +
|Averaged Sidewalls Angle
−
|Notes/Observations
 +
|Observations/Notes
−
|SEM Images
 +
|SEM Images (45d, cross section)
 
|-
  
|-
−
|1/28/2021
 +
|11/18/22
  +
|ND_FL_111822
−
|FE2102
  
−
|309
 +
|268
  +
|1.01
  +
|
  +
|
  +
|[https://wiki.nanotech.ucsb.edu/w/images/6/64/30D_FICP_111822_002.jpg <nowiki>[30D]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/c/c5/CS_FICP_111822_002.jpg <nowiki>[CS]</nowiki>]
  +
|-
  +
|11/07/22
  +
|ND_FL_110722
  +
|264.7
  +
|0.96
  +
|
  +
|
  +
|[https://wiki.nanotech.ucsb.edu/w/images/c/c8/30D_FICP_110722_002.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/e/e9/CS_FICP_110722_002.jpg <nowiki>[CS]</nowiki>]
  +
|-
  +
|10/24/22
  +
|ND_FL_102422
  +
|266.7
  +
|1.22
  +
|
  +
|
  +
|[https://wiki.nanotech.ucsb.edu/w/images/3/38/30D_FICP_102422_002.jpg <nowiki>[30D]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/7/74/CS_FICP_102422_002.jpg <nowiki>[CS]</nowiki>]
  +
|-
  +
|10/14/22
  +
|ND_FL_101422
  +
|249
  +
|0.82
  +
|
  +
|Image drifted very slightly
  +
in SEM. May account for
  +
  +
low selectivity.
  +
|[https://wiki.nanotech.ucsb.edu/w/images/7/76/30D_FICP_101422_002.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/c/ca/CS_FICP_101422_003.jpg <nowiki>[CS]</nowiki>]
  +
|-
  +
|10/3/22
  +
|ND_FL_100322
  +
|228
  +
|1.10
  +
|
  +
|Low etch rate.
  +
|[https://wiki.nanotech.ucsb.edu/w/images/8/8e/30D_10302022_FICP_002.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/9/92/CS_10302022_FICP_002.jpg <nowiki>[CS]</nowiki>]
  +
|-
  +
|9/12/22
  +
|ND_FL_091222
  +
|278
  +
|1.33
  +
|
  +
|high selectivity, may be
  +
due to new Si wafer
  +
|[https://wiki.nanotech.ucsb.edu/w/images/8/8e/30D_FICP_091222_002.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/e/e7/CS_FICP_091222_002.jpg <nowiki>[CS]</nowiki>]
  +
|-
  +
|8/26/22
  +
|ND_FL_082622
  +
|288
  +
|0.97
  +
|
  +
|Low selectivity/e. rate
  +
|[https://wiki.nanotech.ucsb.edu/w/images/b/b9/30D_FICP_082622_001.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/8/86/CS_FICP_082622_001.jpg <nowiki>[CS]</nowiki>]
  +
|-
  +
|8/22/22
  +
|ND_FL_082222
  +
|252.7
  +
|0.93
  +
|
  +
|Lower selectivity/e. rate
  +
|[https://wiki.nanotech.ucsb.edu/w/images/3/3d/40D_FICP_082222_001.jpg <nowiki>[40D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/5/5b/CS_FICP_082222_002.jpg <nowiki>[CS]</nowiki>]
  +
|-
  +
|8/19/22
  +
|ND_Fl_081922
  +
|260.7
 
|0.99
  
|0.99
 
|
  
|
  +
|Low selectivity/etch rate
  +
|[https://wiki.nanotech.ucsb.edu/w/images/8/82/30D_08192022_FICP_001.jpg <nowiki>[30D]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/5/56/CS_08192022_FICP_001.jpg <nowiki>[CS]</nowiki>]
  +
|-
  +
|5/18/22
  +
|NP_SiO2_Fl_10
  +
|308.7
  +
|1.19
 
|
  
|
  +
|still lower etch rate
−
|[https://wiki.nanotech.ucsb.edu/w/images/0/0b/FE210206.pdf]
  
  +
|[https://wiki.nanotech.ucsb.edu/w/images/5/5d/SiO2_Fl_10_45D-003.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/0/06/SiO2_Fl_10_CS_007.jpg <nowiki>[2]</nowiki>]
  +
|-
  +
|5/10/22
  +
|NP_SiO2_Fl_09
  +
|307.3
  +
|1.15
  +
|
  +
|*etch rate seems lower*
  +
|[https://wiki.nanotech.ucsb.edu/w/images/a/a8/SiO2_Fl_09_45D_005.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/a/a7/SiO2_Fl_09_CS_006.jpg <nowiki>[2]</nowiki>]
  +
|-
  +
|4/26/22
  +
|NP_SiO2_Fl_08
  +
|344.7
  +
|1.4
  +
|
  +
|
  +
|[https://wiki.nanotech.ucsb.edu/w/images/c/c2/SiO2_Fl_08_45D_004.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/4/47/SiO2_Fl_08_CS_005.jpg <nowiki>[2]</nowiki>]
  +
|-
  +
|4/20/22
  +
|NP_SiO2_Fl_07
  +
|354.7
  +
|1.11
  +
|
  +
|
  +
|[https://wiki.nanotech.ucsb.edu/w/images/f/f5/SiO2_Fl_07_45D_003.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/3/34/SiO2_Fl_07_CS_004.jpg <nowiki>[2]</nowiki>]
  +
|-
  +
|4/14/22
  +
|NP_SiO2_Fl_06
  +
|352.7
  +
|1.11
  +
|
  +
|
  +
|[https://wiki.nanotech.ucsb.edu/w/images/7/70/SiO2_Fl_06_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/6/68/SiO2_Fl_06_CS_002.jpg <nowiki>[2]</nowiki>]
  +
|-
  +
|3/29/22
  +
|NP_SiO2_Fl_05
  +
|334.7
  +
|1.07
  +
|
  +
|
  +
|[https://wiki.nanotech.ucsb.edu/w/images/a/a3/SiO2_Fl_03_45D_002.jpg <nowiki>[1]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/e/e2/SiO2_Fl_05_CS_002.jpg <nowiki>[2]</nowiki>]
  +
|-
  +
|3/09/22
  +
|NP_SiO2_Fl_04
  +
|358.9
  +
|1.06
  +
|
  +
|
  +
|[https://wiki.nanotech.ucsb.edu/w/images/f/f3/SiO2_FL_04_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/d/db/SiO2_Fl_04_CS_005.jpg <nowiki>[2]</nowiki>]
  +
|-
  +
|3/02/22
  +
|NP_SiO2_Fl_03
  +
|347
  +
|1.05
  +
|
  +
|
  +
|[https://wiki.nanotech.ucsb.edu/w/images/b/b7/SiO2_Fl_03_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/3/38/SiO2_Fl_03_CS_004.jpg <nowiki>[2]</nowiki>]
  +
|-
  +
|2/23/22
  +
|NP_SiO2_Fl_02
  +
|362.7
  +
|1.02
  +
|
  +
|
  +
|[https://wiki.nanotech.ucsb.edu/w/images/c/c8/SiO2_Fl_02_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/8/89/SiO2_Fl_02_CS_001.jpg <nowiki>[2]</nowiki>]
 
|}
  
|}
   
Line 50: Line 191:
 
|[https://wiki.nanotech.ucsb.edu/w/images/8/80/SiO2_Fl_01_45D_002.jpg <nowiki>[1]</nowiki>]
  
|[https://wiki.nanotech.ucsb.edu/w/images/8/80/SiO2_Fl_01_45D_002.jpg <nowiki>[1]</nowiki>]
 
|}
  
|}
  +
  +
 
{| class="wikitable"
  
{| class="wikitable"
−
| colspan="7" |Fluorine ICP: 3.8mT, 50/'''900W''', CHF3/CF4=10/30sccm, time='''90 sec'''
 +
| colspan="7" |Fluorine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm, time=90 sec
 
|-
  
|-
 
|Date
  
|Date
−
|Sample #
 +
|Sample#
−
|Etch Rate (nm/min)
 +
|Etch Rate (nm/min)
−
|Etch Selectivity (SiO2/PR)
 +
|Etch Selectivity (SiO2/PR)
−
|Averaged Sidewalls Angle
+
|Averaged Sidewall Angle (<sup>o</sup>)
  +
|Notes/Observations
−
|Observations/Notes
  
−
|SEM Images (45d, cross section)
 +
|SEM Images
 
|-
  
|-
−
|02/23/22
 +
|1/28/2021
  +
|FE2102
−
|NP_SiO2_Fl_02
  
  +
|309
−
|362.7
  
  +
|0.99
−
|
  
−
|
  
−
|
  
−
|[https://wiki.nanotech.ucsb.edu/w/images/c/c8/SiO2_Fl_02_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/8/89/SiO2_Fl_02_CS_001.jpg <nowiki>[2]</nowiki>]
  
−
|-
  
−
|03/02/22
  
−
|NP_SiO2_Fl_03
  
−
|~360 - 370
  
 
|
  
|
 
|
  
|
  +
|[https://wiki.nanotech.ucsb.edu/w/images/0/0b/FE210206.pdf]
−
|
  
−
|[https://wiki.nanotech.ucsb.edu/w/images/b/b7/SiO2_Fl_03_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/3/3f/SiO2_Fl_03_CS_001.jpg <nowiki>[2]</nowiki>]
  
−
|-
  
−
|3/09/22
  
−
|NP_SiO2_Fl_04
  
−
|358.9
  
−
|
  
−
|
  
−
|
  
−
|[https://wiki.nanotech.ucsb.edu/w/images/f/f3/SiO2_FL_04_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/d/db/SiO2_Fl_04_CS_005.jpg <nowiki>[2]</nowiki>]
  
 
|}
  
|}

Revision as of 18:18, 21 November 2022

  This page is under construction - we are in the process of standardizing and collecting process control data for this tool.  -- Demis 2022-02-11


Fluorine ICP: 3.8mT, 50/900W, CHF3/CF4=10/30sccm, time=90 sec
Date Sample # Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewalls Angle Observations/Notes SEM Images (45d, cross section)
11/18/22 ND_FL_111822 268 1.01 [30D][CS]
11/07/22 ND_FL_110722 264.7 0.96 [30D] [CS]
10/24/22 ND_FL_102422 266.7 1.22 [30D][CS]
10/14/22 ND_FL_101422 249 0.82 Image drifted very slightly

in SEM. May account for

low selectivity.

[30D] [CS]
10/3/22 ND_FL_100322 228 1.10 Low etch rate. [30D] [CS]
9/12/22 ND_FL_091222 278 1.33 high selectivity, may be

due to new Si wafer

[30D] [CS]
8/26/22 ND_FL_082622 288 0.97 Low selectivity/e. rate [30D] [CS]
8/22/22 ND_FL_082222 252.7 0.93 Lower selectivity/e. rate [40D] [CS]
8/19/22 ND_Fl_081922 260.7 0.99 Low selectivity/etch rate [30D][CS]
5/18/22 NP_SiO2_Fl_10 308.7 1.19 still lower etch rate [1] [2]
5/10/22 NP_SiO2_Fl_09 307.3 1.15 *etch rate seems lower* [1] [2]
4/26/22 NP_SiO2_Fl_08 344.7 1.4 [1] [2]
4/20/22 NP_SiO2_Fl_07 354.7 1.11 [1] [2]
4/14/22 NP_SiO2_Fl_06 352.7 1.11 [1] [2]
3/29/22 NP_SiO2_Fl_05 334.7 1.07 [1][2]
3/09/22 NP_SiO2_Fl_04 358.9 1.06 [1] [2]
3/02/22 NP_SiO2_Fl_03 347 1.05 [1] [2]
2/23/22 NP_SiO2_Fl_02 362.7 1.02 [1] [2]


Fluorine ICP: 3.8mT, 50/900W, CHF3/CF4=10/30sccm, time=210 sec'
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) Observations/Notes SEM Image
11/5/2021 SOFL01 136 1.2 [1]
02/09/22 NP_SiO2_Fl_01 Etched for 210s, all of PR was etched off [1]


Fluorine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm, time=90 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) Notes/Observations SEM Images
1/28/2021 FE2102 309 0.99 [2]
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