Difference between revisions of "Test Data of Etching SiO2 with CHF3/CF4-Fluorine ICP Etcher"

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(pasted Ning's 2nd data table, hilighted recipe changes and comment about data being "in progress")
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   '''''This page is under construction - we are in the process of standardizing and collecting process control data for this tool.  -- Demis 2022-02-11'''''
 
   '''''This page is under construction - we are in the process of standardizing and collecting process control data for this tool.  -- Demis 2022-02-11'''''
 +
  
 
{| class="wikitable"
 
{| class="wikitable"
| colspan="6" |Fluorine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm,  time=90 sec
+
| colspan="7" |Fluorine ICP: 3.8mT, 50/'''900W''', CHF3/CF4=10/30sccm,  time='''90 sec'''
 
|-
 
|-
 
|Date
 
|Date
|Sample#
+
|Sample #
|Etch Rate (nm/min)
+
|Etch Rate (nm/min)
|Etch Selectivity (SiO2/PR)
+
|Etch Selectivity (SiO2/PR)
|Averaged Sidewall Angle (<sup>o</sup>)
+
|Averaged Sidewalls Angle
|SEM  Images
+
|Observations/Notes
 +
|SEM Images (45d, cross section)
 +
|-
 +
|9/12/22
 +
|ND_FL_091222
 +
|278
 +
|1.33
 +
|
 +
|high selectivity, may be
 +
due to new Si wafer
 +
|[https://wiki.nanotech.ucsb.edu/w/images/8/8e/30D_FICP_091222_002.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/e/e7/CS_FICP_091222_002.jpg <nowiki>[CS]</nowiki>]
 +
|-
 +
|8/26/22
 +
|ND_FL_082622
 +
|288
 +
|0.97
 +
|
 +
|Low selectivity/e. rate
 +
|[https://wiki.nanotech.ucsb.edu/w/images/b/b9/30D_FICP_082622_001.jpg <nowiki>[30D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/8/86/CS_FICP_082622_001.jpg <nowiki>[CS]</nowiki>]
 +
|-
 +
|8/22/22
 +
|ND_FL_082222
 +
|252.7
 +
|0.93
 +
|
 +
|Lower selectivity/e. rate
 +
|[https://wiki.nanotech.ucsb.edu/w/images/3/3d/40D_FICP_082222_001.jpg <nowiki>[40D]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/5/5b/CS_FICP_082222_002.jpg <nowiki>[CS]</nowiki>]
 
|-
 
|-
|1/28/2021
+
|8/19/22
|FE2102
+
|ND_Fl_081922
|309
+
|260.7
 
|0.99
 
|0.99
 
|
 
|
|[https://wiki.nanotech.ucsb.edu/w/images/0/0b/FE210206.pdf]
+
|Low selectivity/etch rate
 +
|[https://wiki.nanotech.ucsb.edu/w/images/8/82/30D_08192022_FICP_001.jpg <nowiki>[30D]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/5/56/CS_08192022_FICP_001.jpg <nowiki>[CS]</nowiki>]
 +
|-
 +
|5/18/22
 +
|NP_SiO2_Fl_10
 +
|308.7
 +
|1.19
 +
|
 +
|still lower etch rate
 +
|[https://wiki.nanotech.ucsb.edu/w/images/5/5d/SiO2_Fl_10_45D-003.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/0/06/SiO2_Fl_10_CS_007.jpg <nowiki>[2]</nowiki>]
 +
|-
 +
|5/10/22
 +
|NP_SiO2_Fl_09
 +
|307.3
 +
|1.15
 +
|
 +
|*etch rate seems lower*
 +
|[https://wiki.nanotech.ucsb.edu/w/images/a/a8/SiO2_Fl_09_45D_005.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/a/a7/SiO2_Fl_09_CS_006.jpg <nowiki>[2]</nowiki>]
 +
|-
 +
|4/26/22
 +
|NP_SiO2_Fl_08
 +
|344.7
 +
|1.4
 +
|
 +
|
 +
|[https://wiki.nanotech.ucsb.edu/w/images/c/c2/SiO2_Fl_08_45D_004.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/4/47/SiO2_Fl_08_CS_005.jpg <nowiki>[2]</nowiki>]
 +
|-
 +
|4/20/22
 +
|NP_SiO2_Fl_07
 +
|354.7
 +
|1.11
 +
|
 +
|
 +
|[https://wiki.nanotech.ucsb.edu/w/images/f/f5/SiO2_Fl_07_45D_003.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/3/34/SiO2_Fl_07_CS_004.jpg <nowiki>[2]</nowiki>]
 +
|-
 +
|4/14/22
 +
|NP_SiO2_Fl_06
 +
|352.7
 +
|1.11
 +
|
 +
|
 +
|[https://wiki.nanotech.ucsb.edu/w/images/7/70/SiO2_Fl_06_45D_002.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/6/68/SiO2_Fl_06_CS_002.jpg <nowiki>[2]</nowiki>]
 +
|-
 +
|3/29/22
 +
|NP_SiO2_Fl_05
 +
|334.7
 +
|1.07
 +
|
 +
|
 +
|[https://wiki.nanotech.ucsb.edu/w/images/a/a3/SiO2_Fl_03_45D_002.jpg <nowiki>[1]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/e/e2/SiO2_Fl_05_CS_002.jpg <nowiki>[2]</nowiki>]
 +
|-
 +
|3/09/22
 +
|NP_SiO2_Fl_04
 +
|358.9
 +
|1.06
 +
|
 +
|
 +
|[https://wiki.nanotech.ucsb.edu/w/images/f/f3/SiO2_FL_04_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/d/db/SiO2_Fl_04_CS_005.jpg <nowiki>[2]</nowiki>]
 +
|-
 +
|3/02/22
 +
|NP_SiO2_Fl_03
 +
|347
 +
|1.05
 +
|
 +
|
 +
|[https://wiki.nanotech.ucsb.edu/w/images/b/b7/SiO2_Fl_03_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/3/38/SiO2_Fl_03_CS_004.jpg <nowiki>[2]</nowiki>]
 +
|-
 +
|2/23/22
 +
|NP_SiO2_Fl_02
 +
|362.7
 +
|1.02
 +
|
 +
|
 +
|[https://wiki.nanotech.ucsb.edu/w/images/c/c8/SiO2_Fl_02_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/8/89/SiO2_Fl_02_CS_001.jpg <nowiki>[2]</nowiki>]
 
|}
 
|}
  
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{| class="wikitable"
 
{| class="wikitable"
 
| colspan="6" |Fluorine ICP: 3.8mT, 50/'''900W''', CHF3/CF4=10/30sccm,  time='''210 sec''''
 
| colspan="6" |Fluorine ICP: 3.8mT, 50/'''900W''', CHF3/CF4=10/30sccm,  time='''210 sec''''
 +
|
 
|-
 
|-
 
|Date
 
|Date
Line 28: Line 129:
 
|Etch  Selectivity (SiO2/PR)
 
|Etch  Selectivity (SiO2/PR)
 
|Averaged  Sidewall Angle (<sup>o</sup>)
 
|Averaged  Sidewall Angle (<sup>o</sup>)
 +
|Observations/Notes
 
|SEM  Image
 
|SEM  Image
 
|-
 
|-
Line 34: Line 136:
 
|136
 
|136
 
|1.2
 
|1.2
 +
|
 
|
 
|
 
|[https://wiki.nanotech.ucsb.edu/w/images/f/fe/SOFL0103.pdf]
 
|[https://wiki.nanotech.ucsb.edu/w/images/f/fe/SOFL0103.pdf]
 +
|-
 +
|02/09/22
 +
|NP_SiO2_Fl_01
 +
|
 +
|
 +
|
 +
|Etched for 210s, all of PR was etched off
 +
|[https://wiki.nanotech.ucsb.edu/w/images/8/80/SiO2_Fl_01_45D_002.jpg <nowiki>[1]</nowiki>]
 +
|}
 +
 +
 +
{| class="wikitable"
 +
| colspan="7" |Fluorine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm,  time=90 sec
 +
|-
 +
|Date
 +
|Sample#
 +
|Etch  Rate (nm/min)
 +
|Etch  Selectivity (SiO2/PR)
 +
|Averaged  Sidewall Angle (<sup>o</sup>)
 +
|Notes/Observations
 +
|SEM  Images
 +
|-
 +
|1/28/2021
 +
|FE2102
 +
|309
 +
|0.99
 +
|
 +
|
 +
|[https://wiki.nanotech.ucsb.edu/w/images/0/0b/FE210206.pdf]
 
|}
 
|}

Revision as of 07:30, 13 September 2022

  This page is under construction - we are in the process of standardizing and collecting process control data for this tool.  -- Demis 2022-02-11


Fluorine ICP: 3.8mT, 50/900W, CHF3/CF4=10/30sccm, time=90 sec
Date Sample # Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewalls Angle Observations/Notes SEM Images (45d, cross section)
9/12/22 ND_FL_091222 278 1.33 high selectivity, may be

due to new Si wafer

[30D] [CS]
8/26/22 ND_FL_082622 288 0.97 Low selectivity/e. rate [30D] [CS]
8/22/22 ND_FL_082222 252.7 0.93 Lower selectivity/e. rate [40D] [CS]
8/19/22 ND_Fl_081922 260.7 0.99 Low selectivity/etch rate [30D][CS]
5/18/22 NP_SiO2_Fl_10 308.7 1.19 still lower etch rate [1] [2]
5/10/22 NP_SiO2_Fl_09 307.3 1.15 *etch rate seems lower* [1] [2]
4/26/22 NP_SiO2_Fl_08 344.7 1.4 [1] [2]
4/20/22 NP_SiO2_Fl_07 354.7 1.11 [1] [2]
4/14/22 NP_SiO2_Fl_06 352.7 1.11 [1] [2]
3/29/22 NP_SiO2_Fl_05 334.7 1.07 [1][2]
3/09/22 NP_SiO2_Fl_04 358.9 1.06 [1] [2]
3/02/22 NP_SiO2_Fl_03 347 1.05 [1] [2]
2/23/22 NP_SiO2_Fl_02 362.7 1.02 [1] [2]


Fluorine ICP: 3.8mT, 50/900W, CHF3/CF4=10/30sccm, time=210 sec'
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) Observations/Notes SEM Image
11/5/2021 SOFL01 136 1.2 [1]
02/09/22 NP_SiO2_Fl_01 Etched for 210s, all of PR was etched off [1]


Fluorine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm, time=90 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) Notes/Observations SEM Images
1/28/2021 FE2102 309 0.99 [2]