Difference between revisions of "Test Data of Etching SiO2 with CHF3/CF4-Fluorine ICP Etcher"

Revision as of 12:50, 12 April 2022

  This page is under construction - we are in the process of standardizing and collecting process control data for this tool.  -- Demis 2022-02-11

Fluorine ICP: 3.8mT, 50/900W, CHF3/CF4=10/30sccm, time=90 sec
Date	Sample #	Etch Rate (nm/min)	Etch Selectivity (SiO2/PR)	Averaged Sidewalls Angle	Observations/Notes	SEM Images (45d, cross section)
02/23/22	NP_SiO2_Fl_02	362.7	1.02			[1] [2]
03/02/22	NP_SiO2_Fl_03	~360 - 370	1.05			[1] [2]
3/09/22	NP_SiO2_Fl_04	358.9	1.06			[1] [2]
3/29/2022	NP_SiO2_Fl_05	334.7	1.07			[1][2]

Fluorine ICP: 3.8mT, 50/900W, CHF3/CF4=10/30sccm, time=210 sec'
Date	Sample#	Etch Rate (nm/min)	Etch Selectivity (SiO2/PR)	Averaged Sidewall Angle (^o)	Observations/Notes	SEM Image
11/5/2021	SOFL01	136	1.2			[1]
02/09/22	NP_SiO2_Fl_01				Etched for 210s, all of PR was etched off	[1]

Fluorine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm, time=90 sec
Date	Sample#	Etch Rate (nm/min)	Etch Selectivity (SiO2/PR)	Averaged Sidewall Angle (^o)	Notes/Observations	SEM Images
1/28/2021	FE2102	309	0.99			[2]

@@ Line 2: / Line 2: @@
-{| class="wikitable"
-| colspan="6" |Fluorine ICP: 3.8mT, 50/'''900W''', CHF3/CF4=10/30sccm,  time='''210 sec''''
-|
-|-
-|Date
-|Sample#
-|Etch  Rate (nm/min)
-|Etch  Selectivity (SiO2/PR)
-|Averaged  Sidewall Angle (<sup>o</sup>)
-|Observations/Notes
-|SEM  Image
-|-
-|11/5/2021
-|SOFL01
-|136
-|1.2
-|
-|
-|[https://wiki.nanotech.ucsb.edu/w/images/f/fe/SOFL0103.pdf]
-|-
-|02/09/22
-|NP_SiO2_Fl_01
-|
-|
-|
-|Etched for 210s, all of PR was etched off
-|[https://wiki.nanotech.ucsb.edu/w/images/8/80/SiO2_Fl_01_45D_002.jpg <nowiki>[1]</nowiki>]
-|}
 {| class="wikitable"
 | colspan="7" |Fluorine ICP: 3.8mT, 50/'''900W''', CHF3/CF4=10/30sccm,  time='''90 sec'''
@@ Line 72: / Line 45: @@
 |
 |[https://wiki.nanotech.ucsb.edu/w/images/a/a3/SiO2_Fl_03_45D_002.jpg <nowiki>[1]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/e/e2/SiO2_Fl_05_CS_002.jpg <nowiki>[2]</nowiki>]
+|}
+{| class="wikitable"
+| colspan="6" |Fluorine ICP: 3.8mT, 50/'''900W''', CHF3/CF4=10/30sccm,  time='''210 sec''''
+|
+|-
+|Date
+|Sample#
+|Etch  Rate (nm/min)
+|Etch  Selectivity (SiO2/PR)
+|Averaged  Sidewall Angle (<sup>o</sup>)
+|Observations/Notes
+|SEM  Image
+|-
+|11/5/2021
+|SOFL01
+|136
+|1.2
+|
+|
+|[https://wiki.nanotech.ucsb.edu/w/images/f/fe/SOFL0103.pdf]
+|-
+|02/09/22
+|NP_SiO2_Fl_01
+|
+|
+|
+|Etched for 210s, all of PR was etched off
+|[https://wiki.nanotech.ucsb.edu/w/images/8/80/SiO2_Fl_01_45D_002.jpg <nowiki>[1]</nowiki>]
 |}