Difference between revisions of "Test Data of Etching SiO2 with CHF3/CF4-Fluorine ICP Etcher"

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(moved cals table to the top)
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{| class="wikitable"
+
 
| colspan="6" |Fluorine ICP: 3.8mT, 50/'''900W''', CHF3/CF4=10/30sccm,  time='''210 sec''''
 
|
 
|-
 
|Date
 
|Sample#
 
|Etch  Rate (nm/min)
 
|Etch  Selectivity (SiO2/PR)
 
|Averaged  Sidewall Angle (<sup>o</sup>)
 
|Observations/Notes
 
|SEM  Image
 
|-
 
|11/5/2021
 
|SOFL01
 
|136
 
|1.2
 
|
 
|
 
|[https://wiki.nanotech.ucsb.edu/w/images/f/fe/SOFL0103.pdf]
 
|-
 
|02/09/22
 
|NP_SiO2_Fl_01
 
|
 
|
 
|
 
|Etched for 210s, all of PR was etched off
 
|[https://wiki.nanotech.ucsb.edu/w/images/8/80/SiO2_Fl_01_45D_002.jpg <nowiki>[1]</nowiki>]
 
|}
 
 
{| class="wikitable"
 
{| class="wikitable"
 
| colspan="7" |Fluorine ICP: 3.8mT, 50/'''900W''', CHF3/CF4=10/30sccm,  time='''90 sec'''
 
| colspan="7" |Fluorine ICP: 3.8mT, 50/'''900W''', CHF3/CF4=10/30sccm,  time='''90 sec'''
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|
 
|
 
|[https://wiki.nanotech.ucsb.edu/w/images/a/a3/SiO2_Fl_03_45D_002.jpg <nowiki>[1]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/e/e2/SiO2_Fl_05_CS_002.jpg <nowiki>[2]</nowiki>]
 
|[https://wiki.nanotech.ucsb.edu/w/images/a/a3/SiO2_Fl_03_45D_002.jpg <nowiki>[1]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/e/e2/SiO2_Fl_05_CS_002.jpg <nowiki>[2]</nowiki>]
 +
|}
 +
 +
 +
{| class="wikitable"
 +
| colspan="6" |Fluorine ICP: 3.8mT, 50/'''900W''', CHF3/CF4=10/30sccm,  time='''210 sec''''
 +
|
 +
|-
 +
|Date
 +
|Sample#
 +
|Etch  Rate (nm/min)
 +
|Etch  Selectivity (SiO2/PR)
 +
|Averaged  Sidewall Angle (<sup>o</sup>)
 +
|Observations/Notes
 +
|SEM  Image
 +
|-
 +
|11/5/2021
 +
|SOFL01
 +
|136
 +
|1.2
 +
|
 +
|
 +
|[https://wiki.nanotech.ucsb.edu/w/images/f/fe/SOFL0103.pdf]
 +
|-
 +
|02/09/22
 +
|NP_SiO2_Fl_01
 +
|
 +
|
 +
|
 +
|Etched for 210s, all of PR was etched off
 +
|[https://wiki.nanotech.ucsb.edu/w/images/8/80/SiO2_Fl_01_45D_002.jpg <nowiki>[1]</nowiki>]
 
|}
 
|}
  

Revision as of 11:50, 12 April 2022

  This page is under construction - we are in the process of standardizing and collecting process control data for this tool.  -- Demis 2022-02-11


Fluorine ICP: 3.8mT, 50/900W, CHF3/CF4=10/30sccm, time=90 sec
Date Sample # Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewalls Angle Observations/Notes SEM Images (45d, cross section)
02/23/22 NP_SiO2_Fl_02 362.7 1.02 [1] [2]
03/02/22 NP_SiO2_Fl_03 ~360 - 370 1.05 [1] [2]
3/09/22 NP_SiO2_Fl_04 358.9 1.06 [1] [2]
3/29/2022 NP_SiO2_Fl_05 334.7 1.07 [1][2]


Fluorine ICP: 3.8mT, 50/900W, CHF3/CF4=10/30sccm, time=210 sec'
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) Observations/Notes SEM Image
11/5/2021 SOFL01 136 1.2 [1]
02/09/22 NP_SiO2_Fl_01 Etched for 210s, all of PR was etched off [1]


Fluorine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm, time=90 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) Notes/Observations SEM Images
1/28/2021 FE2102 309 0.99 [2]