Difference between revisions of "Test Data of Etching SiO2 with CHF3/CF4-Fluorine ICP Etcher"

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m (added entry to Fl historical data (wiht new table for 90s cals))
m (added entry in Fl Etcher, added selectivity to recent Cals)
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|Etch Rate (nm/min)
 
|Etch Rate (nm/min)
 
|Etch Selectivity (SiO2/PR)
 
|Etch Selectivity (SiO2/PR)
|Averaged Sidewalls Angle  
+
|Averaged Sidewalls Angle
 
|Observations/Notes
 
|Observations/Notes
 
|SEM Images (45d, cross section)
 
|SEM Images (45d, cross section)
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|NP_SiO2_Fl_02
 
|NP_SiO2_Fl_02
 
|362.7
 
|362.7
|
+
|1.02
 
|
 
|
 
|
 
|
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|NP_SiO2_Fl_03
 
|NP_SiO2_Fl_03
 
|~360 - 370
 
|~360 - 370
|
+
|1.05
 
|
 
|
 
|
 
|
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|NP_SiO2_Fl_04
 
|NP_SiO2_Fl_04
 
|358.9
 
|358.9
 +
|1.06
 +
|
 
|
 
|
 +
|[https://wiki.nanotech.ucsb.edu/w/images/f/f3/SiO2_FL_04_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/d/db/SiO2_Fl_04_CS_005.jpg <nowiki>[2]</nowiki>]
 +
|-
 +
|3/29/2022
 +
|NP_SiO2_Fl_05
 +
|334.7
 +
|1.07
 
|
 
|
 
|
 
|
|[https://wiki.nanotech.ucsb.edu/w/images/f/f3/SiO2_FL_04_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/d/db/SiO2_Fl_04_CS_005.jpg <nowiki>[2]</nowiki>]
+
|[https://wiki.nanotech.ucsb.edu/w/images/a/a3/SiO2_Fl_03_45D_002.jpg <nowiki>[1]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/e/e2/SiO2_Fl_05_CS_002.jpg <nowiki>[2]</nowiki>]
 
|}
 
|}

Revision as of 09:29, 30 March 2022

  This page is under construction - we are in the process of standardizing and collecting process control data for this tool.  -- Demis 2022-02-11
Fluorine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm, time=90 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) Notes/Observations SEM Images
1/28/2021 FE2102 309 0.99 [1]


Fluorine ICP: 3.8mT, 50/900W, CHF3/CF4=10/30sccm, time=210 sec'
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) Observations/Notes SEM Image
11/5/2021 SOFL01 136 1.2 [2]
02/09/22 NP_SiO2_Fl_01 Etched for 210s, all of PR was etched off [1]
Fluorine ICP: 3.8mT, 50/900W, CHF3/CF4=10/30sccm, time=90 sec
Date Sample # Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewalls Angle Observations/Notes SEM Images (45d, cross section)
02/23/22 NP_SiO2_Fl_02 362.7 1.02 [1] [2]
03/02/22 NP_SiO2_Fl_03 ~360 - 370 1.05 [1] [2]
3/09/22 NP_SiO2_Fl_04 358.9 1.06 [1] [2]
3/29/2022 NP_SiO2_Fl_05 334.7 1.07 [1][2]