Difference between revisions of "Test Data of Etching SiO2 with CHF3/CF4-Fluorine ICP Etcher"

From UCSB Nanofab Wiki
Jump to navigation Jump to search
m (added new entry + SEM into Fl etcher historical data)
m (added entry to Fl historical data (wiht new table for 90s cals))
Line 49: Line 49:
 
|Etched for 210s, all of PR was etched off
  
|Etched for 210s, all of PR was etched off
 
|[https://wiki.nanotech.ucsb.edu/w/images/8/80/SiO2_Fl_01_45D_002.jpg <nowiki>[1]</nowiki>]
  
|[https://wiki.nanotech.ucsb.edu/w/images/8/80/SiO2_Fl_01_45D_002.jpg <nowiki>[1]</nowiki>]
  +
|}
  +
{| class="wikitable"
  +
| colspan="7" |Fluorine ICP: 3.8mT, 50/'''900W''', CHF3/CF4=10/30sccm, time='''90 sec'''
  +
|-
  +
|Date
  +
|Sample #
  +
|Etch Rate (nm/min)
  +
|Etch Selectivity (SiO2/PR)
  +
|Averaged Sidewalls Angle
  +
|Observations/Notes
  +
|SEM Images (45d, cross section)
 
|-
  
|-
 
|02/23/22
  
|02/23/22
Line 55: Line 66:
 
|
  
|
 
|
  
|
  +
|
−
|Etched for 90s
  
 
|[https://wiki.nanotech.ucsb.edu/w/images/c/c8/SiO2_Fl_02_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/8/89/SiO2_Fl_02_CS_001.jpg <nowiki>[2]</nowiki>]
  
|[https://wiki.nanotech.ucsb.edu/w/images/c/c8/SiO2_Fl_02_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/8/89/SiO2_Fl_02_CS_001.jpg <nowiki>[2]</nowiki>]
 
|-
  
|-
Line 63: Line 74:
 
|
  
|
 
|
  
|
  +
|
−
|Etched for 90s
  
 
|[https://wiki.nanotech.ucsb.edu/w/images/b/b7/SiO2_Fl_03_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/3/3f/SiO2_Fl_03_CS_001.jpg <nowiki>[2]</nowiki>]
  
|[https://wiki.nanotech.ucsb.edu/w/images/b/b7/SiO2_Fl_03_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/3/3f/SiO2_Fl_03_CS_001.jpg <nowiki>[2]</nowiki>]
  +
|-
  +
|3/09/22
  +
|NP_SiO2_Fl_04
  +
|358.9
  +
|
  +
|
  +
|
  +
|[https://wiki.nanotech.ucsb.edu/w/images/f/f3/SiO2_FL_04_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/d/db/SiO2_Fl_04_CS_005.jpg <nowiki>[2]</nowiki>]
 
|}
  
|}

Revision as of 10:35, 9 March 2022

  This page is under construction - we are in the process of standardizing and collecting process control data for this tool.  -- Demis 2022-02-11
Fluorine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm, time=90 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) Notes/Observations SEM Images
1/28/2021 FE2102 309 0.99 [1]


Fluorine ICP: 3.8mT, 50/900W, CHF3/CF4=10/30sccm, time=210 sec'
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) Observations/Notes SEM Image
11/5/2021 SOFL01 136 1.2 [2]
02/09/22 NP_SiO2_Fl_01 Etched for 210s, all of PR was etched off [1]
Fluorine ICP: 3.8mT, 50/900W, CHF3/CF4=10/30sccm, time=90 sec
Date Sample # Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewalls Angle Observations/Notes SEM Images (45d, cross section)
02/23/22 NP_SiO2_Fl_02 362.7 [1] [2]
03/02/22 NP_SiO2_Fl_03 ~360 - 370 [1] [2]
3/09/22 NP_SiO2_Fl_04 358.9 [1] [2]
Retrieved from "https://wiki.nanofab.ucsb.edu/w/index.php?title=Test_Data_of_Etching_SiO2_with_CHF3/CF4-Fluorine_ICP_Etcher&oldid=159710"