Difference between revisions of "Test Data of Etching SiO2 with CHF3/CF4-Fluorine ICP Etcher"

From UCSB Nanofab Wiki
Jump to navigation Jump to search
m (Added SEMs and some notes to new etch cals done on FL etcher)
m (added new entry + SEM into Fl etcher historical data)
Line 60: Line 60:
 
|03/02/22
 
|03/02/22
 
|NP_SiO2_Fl_03
 
|NP_SiO2_Fl_03
|
+
|~360 - 370
 
|
 
|
 
|
 
|
 
|Etched for 90s
 
|Etched for 90s
|
+
|[https://wiki.nanotech.ucsb.edu/w/images/b/b7/SiO2_Fl_03_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/3/3f/SiO2_Fl_03_CS_001.jpg <nowiki>[2]</nowiki>]
 
|}
 
|}

Revision as of 10:56, 8 March 2022

  This page is under construction - we are in the process of standardizing and collecting process control data for this tool.  -- Demis 2022-02-11
Fluorine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm, time=90 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) Notes/Observations SEM Images
1/28/2021 FE2102 309 0.99 [1]


Fluorine ICP: 3.8mT, 50/900W, CHF3/CF4=10/30sccm, time=210 sec'
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) Observations/Notes SEM Image
11/5/2021 SOFL01 136 1.2 [2]
02/09/22 NP_SiO2_Fl_01 Etched for 210s, all of PR was etched off [1]
02/23/22 NP_SiO2_Fl_02 362.7 Etched for 90s [1] [2]
03/02/22 NP_SiO2_Fl_03 ~360 - 370 Etched for 90s [1] [2]