Difference between revisions of "Test Data of Etching SiO2 with CHF3/CF4-Fluorine ICP Etcher"

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(pasted Ning's 2nd data table, hilighted recipe changes and comment about data being "in progress")
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  '''''This page is under construction - we are in the process of standardizing and collecting process control data for this tool.  -- Demis 2022-02-11'''''
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{| class="wikitable"
 
{| class="wikitable"
 
| colspan="6" |Fluorine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm,  time=90 sec
 
| colspan="6" |Fluorine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm,  time=90 sec
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|
 
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|[https://wiki.nanotech.ucsb.edu/w/images/0/0b/FE210206.pdf]
 
|[https://wiki.nanotech.ucsb.edu/w/images/0/0b/FE210206.pdf]
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|}
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{| class="wikitable"
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| colspan="6" |Fluorine ICP: 3.8mT, 50/'''900W''', CHF3/CF4=10/30sccm,  time='''210 sec''''
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|-
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|Date
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|Sample#
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|Etch  Rate (nm/min)
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|Etch  Selectivity (SiO2/PR)
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|Averaged  Sidewall Angle (<sup>o</sup>)
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|SEM  Image
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|-
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|11/5/2021
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|SOFL01
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|136
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|1.2
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|
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|[https://wiki.nanotech.ucsb.edu/w/images/f/fe/SOFL0103.pdf]
 
|}
 
|}

Revision as of 12:11, 11 February 2022

  This page is under construction - we are in the process of standardizing and collecting process control data for this tool.  -- Demis 2022-02-11
Fluorine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm, time=90 sec
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) SEM Images
1/28/2021 FE2102 309 0.99 [1]


Fluorine ICP: 3.8mT, 50/900W, CHF3/CF4=10/30sccm, time=210 sec'
Date Sample# Etch Rate (nm/min) Etch Selectivity (SiO2/PR) Averaged Sidewall Angle (o) SEM Image
11/5/2021 SOFL01 136 1.2 [2]