Difference between revisions of "Test Data of Etching SiO2 with CHF3/CF4-Fluorine ICP Etcher"
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(added comment about NP vs ND meas, deleted extraneous tables of old non-standard measurements) |
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− | '''''This page is under construction - we are in the process of standardizing and collecting process control data for this tool. -- Demis 2022-02-11''''' |
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|Low selectivity/etch rate |
|Low selectivity/etch rate |
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|[https://wiki.nanotech.ucsb.edu/w/images/8/82/30D_08192022_FICP_001.jpg <nowiki>[30D]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/5/56/CS_08192022_FICP_001.jpg <nowiki>[CS]</nowiki>] |
|[https://wiki.nanotech.ucsb.edu/w/images/8/82/30D_08192022_FICP_001.jpg <nowiki>[30D]</nowiki>][https://wiki.nanotech.ucsb.edu/w/images/5/56/CS_08192022_FICP_001.jpg <nowiki>[CS]</nowiki>] |
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+ | | colspan="7" |'''''Change in operator - SEMs below (by NP) are erroneously measured to the trench, instead of flat plane.''''' |
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|5/18/22 |
|5/18/22 |
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|[https://wiki.nanotech.ucsb.edu/w/images/c/c8/SiO2_Fl_02_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/8/89/SiO2_Fl_02_CS_001.jpg <nowiki>[2]</nowiki>] |
|[https://wiki.nanotech.ucsb.edu/w/images/c/c8/SiO2_Fl_02_45D_001.jpg <nowiki>[1]</nowiki>] [https://wiki.nanotech.ucsb.edu/w/images/8/89/SiO2_Fl_02_CS_001.jpg <nowiki>[2]</nowiki>] |
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− | {| class="wikitable" |
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− | | colspan="6" |Fluorine ICP: 3.8mT, 50/'''900W''', CHF3/CF4=10/30sccm, time='''210 sec'''' |
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− | |Date |
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− | |Sample# |
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− | |Etch Rate (nm/min) |
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− | |Etch Selectivity (SiO2/PR) |
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− | |Averaged Sidewall Angle (<sup>o</sup>) |
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− | |Observations/Notes |
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− | |SEM Image |
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− | |- |
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− | |11/5/2021 |
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− | |SOFL01 |
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− | |136 |
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− | |1.2 |
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− | |[https://wiki.nanotech.ucsb.edu/w/images/f/fe/SOFL0103.pdf] |
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− | |- |
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− | |02/09/22 |
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− | |NP_SiO2_Fl_01 |
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− | |Etched for 210s, all of PR was etched off |
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− | |[https://wiki.nanotech.ucsb.edu/w/images/8/80/SiO2_Fl_01_45D_002.jpg <nowiki>[1]</nowiki>] |
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− | |} |
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− | {| class="wikitable" |
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− | | colspan="7" |Fluorine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm, time=90 sec |
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− | |- |
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− | |Date |
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− | |Sample# |
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− | |Etch Rate (nm/min) |
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− | |Etch Selectivity (SiO2/PR) |
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− | |Averaged Sidewall Angle (<sup>o</sup>) |
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− | |Notes/Observations |
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− | |SEM Images |
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− | |- |
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− | |1/28/2021 |
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− | |FE2102 |
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− | |309 |
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− | |0.99 |
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− | | |
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− | |[https://wiki.nanotech.ucsb.edu/w/images/0/0b/FE210206.pdf] |
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Revision as of 00:36, 10 December 2022
Fluorine ICP: 3.8mT, 50/900W, CHF3/CF4=10/30sccm, time=90 sec | ||||||
Date | Sample # | Etch Rate (nm/min) | Etch Selectivity (SiO2/PR) | Averaged Sidewalls Angle | Observations/Notes | SEM Images (45d, cross section) |
11/18/22 | ND_FL_111822 | 268 | 1.01 | [30D][CS] | ||
11/07/22 | ND_FL_110722 | 264.7 | 0.96 | [30D] [CS] | ||
10/24/22 | ND_FL_102422 | 266.7 | 1.22 | [30D][CS] | ||
10/14/22 | ND_FL_101422 | 249 | 0.82 | Image drifted very slightly
in SEM. May account for low selectivity. |
[30D] [CS] | |
10/3/22 | ND_FL_100322 | 228 | 1.10 | Low etch rate. | [30D] [CS] | |
9/12/22 | ND_FL_091222 | 278 | 1.33 | high selectivity, may be
due to new Si wafer |
[30D] [CS] | |
8/26/22 | ND_FL_082622 | 288 | 0.97 | Low selectivity/e. rate | [30D] [CS] | |
8/22/22 | ND_FL_082222 | 252.7 | 0.93 | Lower selectivity/e. rate | [40D] [CS] | |
8/19/22 | ND_Fl_081922 | 260.7 | 0.99 | Low selectivity/etch rate | [30D][CS] | |
Change in operator - SEMs below (by NP) are erroneously measured to the trench, instead of flat plane. | ||||||
5/18/22 | NP_SiO2_Fl_10 | 308.7 | 1.19 | still lower etch rate | [1] [2] | |
5/10/22 | NP_SiO2_Fl_09 | 307.3 | 1.15 | *etch rate seems lower* | [1] [2] | |
4/26/22 | NP_SiO2_Fl_08 | 344.7 | 1.4 | [1] [2] | ||
4/20/22 | NP_SiO2_Fl_07 | 354.7 | 1.11 | [1] [2] | ||
4/14/22 | NP_SiO2_Fl_06 | 352.7 | 1.11 | [1] [2] | ||
3/29/22 | NP_SiO2_Fl_05 | 334.7 | 1.07 | [1][2] | ||
3/09/22 | NP_SiO2_Fl_04 | 358.9 | 1.06 | [1] [2] | ||
3/02/22 | NP_SiO2_Fl_03 | 347 | 1.05 | [1] [2] | ||
2/23/22 | NP_SiO2_Fl_02 | 362.7 | 1.02 | [1] [2] |