Test Data of Etching SiO2 with CHF3/CF4-Florine ICP Etcher

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Florine ICP: 3.8mT, 50/800W, CHF3/CF4=10/30sccm, and Time=90 sec
Date	Sample#	Etch Rate (nm/min)	Etch Selectivity (SiO2/PR)	Averaged Sidewall Angle (^o)	SEM Images
1/28/2021	FE2102	309	0.99		[1]

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