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Revision as of 06:41, 27 May 2021 by John d (talk | contribs) (link to Bill's Ru-masked SiO2 paper)
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Publications using the Nanofab

Highly Selective and Vertical Etch of Silicon Dioxide using Ruthenium Films as an Etch Mask

William J. Mitchell, Brian J. Thibeault, Demis D. John, and Thomas E. Reynolds

Journal of Vacuum Science and Technology A, 39, 043204, May 27th 2021

A similar process flow can be found at the Fluorine-ICP Recipe Page.

Deuterated silicon dioxide for heterogeneous integration of ultra-low-loss waveguides

Warren Jin, Demis D. John, Jared F. Bauters, Tony Bosch, Brian J. Thibeault, and John E. Bowers

Optics Letters Vol. 45, Issue 12, pp. 3340-3343 (2020)

Quantum supremacy using a programmable superconducting processor

F. Arute, K. Arya, ... Harmut Neven, John M. Martinis

Nature, volume 574, pages 505–510 (2019)

An optical-frequency synthesizer using integrated photonics

D. T. Spencer, T. Drake, ... John E. Bowers, Scott A. Diddams, Scott B. Papp

Nature, volume 557, pages 81–85 (2018)

Continuous-wave operation of m-plane GaN-based vertical-cavity surface-emitting lasers with a tunnel junction intracavity contact

C.A. Forman, S.G. Lee, ... S.P. DenBaars, S. Nakamura

Applied Physics Letters, Vol. 112, Issue 11, 2018

DARKNESS: A Microwave Kinetic Inductance Detector Integral Field Spectrograph for High-contrast Astronomy

S.R. Meeker, B.A. Mazin, ... G. Vasisht, E. Serabyn

Astronomical Society of the Pacific, Volume 130, Issue 988, pp. 065001 (2018)

Dielectrophoretic Nanoparticle Aggregation for On-Demand Surface Enhanced Raman Spectroscopy Analysis

R. Salemmilani, B.D. Piorek, A.W. Fountain, M. Moskovits, C.D. Meinhart

Analytical Chemistry, 90, 13, 7930-7936 (2018)

Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs

B. Romanczyk, S. Wienecke, M. Guidry, H. Li, E. Ahmadi, X. Zheng, S. Keller, U.K. Mishra

IEEE Transactions On Electron Devices, Vol. 65, No. 1 (2018)