Difference between revisions of "Stepper Recipes"

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=[[Stepper 1 (GCA 6300)]]=
  
=[[Stepper 1 (GCA 6300)]]=
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==Positive Resist (GCA 6300)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed-->
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Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time.
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{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"
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|-bgcolor="#D0E7FF"
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!width=100|Resist
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!width=100|Spin Cond.
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!width=100|Bake
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!width=100|Thickness
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!width=125|Exposure Time
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!width=100|Developer
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!width=125|Developer Time
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!width=300|Comments
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|-
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|AZ4110
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|4 krpm/30”
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|95°C/60”
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|~ 1.1 um
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|8”
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|AZ400K:DI 1:4
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|50"
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|align="left"|
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|-
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|AZ4210
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|4 krpm/30”
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|95°C/60”
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|~ 2.1 um
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|13”
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|AZ400K:DI 1:4
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|70”
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|align="left"|
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|-
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|AZ4330
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|4 krpm/30”
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|95°C/60”
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|~ 3.3 um
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|18”
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|AZ400K:DI 1:4
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|90”
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|align="left"|
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|-
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|SPR220-3.0
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|3.5 krpm/30”
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|115°C/90”
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|~ 2.5 um
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|25”
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|AZ300MIF
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|50”
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|align="left"|
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*Post Bake 115°C /60”
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*Better Cl2 etch resistance than 4330
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*{{fl|SPR220-3contactrecipe.pdf|More Information}}
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|-
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|SPR220-7.0
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|3.5 krpm/45”
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|115°C/120”
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|~ 7.5 um
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|60”
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|AZ300MIF
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|70”
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|align="left"|
  +
*{{fl|SPR220-7contactrecipe.pdf|More Information}}
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|}
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  +
==Negative Resist (GCA 6300)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed-->
  +
Unless otherwise noted, bakes are on hot plate. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.
  +
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"
  +
|-bgcolor="#D0E7FF"
  +
!width=100|Resist
  +
!width=100|Spin Cond.
  +
!width=100|Bake
  +
!width=100|Thickness
  +
!width=125|Exposure Time
  +
!width=100|PEB
  +
!width=100|Flood
  +
!width=125|Developer
  +
!width=125|Developer Time
  +
!width=350|Comments
  +
|-
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|AZ5214
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|6 krpm/30”
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|95°C/60”
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|~ 1 um
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|5”
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|110°C/60”
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|60”
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|AZ400K:DI 1:5.5 <br>or<br>AZ300MIF
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|60"<br><br>45"
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|align="left"|
  +
*Concentrated 400K Dev. Etches 5214
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|-
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|AZ5214
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|6 krpm/30”
  +
|95°C/60”
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|~ 1 um
  +
|10”
  +
|110°C/60”
  +
|60”
  +
|AZ300MIF
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|45”
  +
|align="left"|
  +
*Using i-line filter in MJB-3. 0.7 um resolution possible
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|-
  +
|AZnLOF2020
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|3 krpm/30”
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|110°C/90”
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|~ 2.1 um
  +
|10”
  +
|110°C/60”
  +
|
  +
|AZ300MIF
  +
|60”
  +
|align="left"|
  +
*Use i-line filter
  +
*For Undercut
  +
*{{fl|AZnLOF2020contactrecipe.pdf|More Information}}
  +
|}
  +
 
=[[Stepper 2 (AutoStep 200)]]=
  
=[[Stepper 2 (AutoStep 200)]]=
 
=[[Stepper 3 (ASML DUV)]]=
  
=[[Stepper 3 (ASML DUV)]]=

Revision as of 17:12, 8 November 2012

Back to Lithography Recipes. Below is a listing of stepper lithography recipes. Based on your sample reflectivity, absorption, and surface topography the exposure time / focus offset parameters may vary. This listing is a guideline to get you started. The recipes are tabulated to give you the values of the key parameters you will need to establish your recipe. For wafer cleaning and preparation including HMDS use, please refer to the cleaning and preparation section in the lithography section of this web site. Post develop bakes (not listed) are used to make the resist more etch resistant and depend on subsequent processes. Care should be taken with post development bakes as resist reflow can occur. Unless otherwise noted, all exposures are done on flat, silicon wafers.

Parameters are indicated in separate tables for each stepper system. Multiply the exposure times by 0.30 (from the 6300 system) to get a starting exposure time for the GCA Autostep200 system. You will need to do an exposure array to get precise times for the Autostep system. In general, the resolution achievable is ~ 100 nm smaller for the Autostep200 system.

Stepper 1 (GCA 6300)

Positive Resist (GCA 6300)

Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time.

Resist Spin Cond. Bake Thickness Exposure Time Developer Developer Time Comments
AZ4110 4 krpm/30” 95°C/60” ~ 1.1 um 8” AZ400K:DI 1:4 50"
AZ4210 4 krpm/30” 95°C/60” ~ 2.1 um 13” AZ400K:DI 1:4 70”
AZ4330 4 krpm/30” 95°C/60” ~ 3.3 um 18” AZ400K:DI 1:4 90”
SPR220-3.0 3.5 krpm/30” 115°C/90” ~ 2.5 um 25” AZ300MIF 50”
SPR220-7.0 3.5 krpm/45” 115°C/120” ~ 7.5 um 60” AZ300MIF 70”

Negative Resist (GCA 6300)

Unless otherwise noted, bakes are on hot plate. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.

Resist Spin Cond. Bake Thickness Exposure Time PEB Flood Developer Developer Time Comments
AZ5214 6 krpm/30” 95°C/60” ~ 1 um 5” 110°C/60” 60” AZ400K:DI 1:5.5
or
AZ300MIF 		60"

45"
  • Concentrated 400K Dev. Etches 5214
AZ5214 6 krpm/30” 95°C/60” ~ 1 um 10” 110°C/60” 60” AZ300MIF 45”
  • Using i-line filter in MJB-3. 0.7 um resolution possible
AZnLOF2020 3 krpm/30” 110°C/90” ~ 2.1 um 10” 110°C/60” AZ300MIF 60”

Stepper 2 (AutoStep 200)

Stepper 3 (ASML DUV)

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